IXDN609SITR Allicdata Electronics
Allicdata Part #:

IXDN609SITR-ND

Manufacturer Part#:

IXDN609SITR

Price: $ 0.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS Integrated Circuits Division
Short Description: IC GATE DVR 9A NON-INV 8SOIC
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP
DataSheet: IXDN609SITR datasheetIXDN609SITR Datasheet/PDF
Quantity: 1000
1 +: $ 0.88000
10 +: $ 0.85360
100 +: $ 0.83600
1000 +: $ 0.81840
10000 +: $ 0.79200
Stock 1000Can Ship Immediately
$ 0.88
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 22ns, 15ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP
Description

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PMIC – Gate Drivers are electronic devices used to drive power transistors or electronic switches. IXDN609SITR is one such gate driver. It is a monolithic gate drive IC intended for driving insulated gate bipolar transistors (IGBTs) in continuous conduction. It offers full control, sensing, and protection features built into a single package.

IXDN609SITR is a high-voltage, high-current gate driver device with a wide range of applications. It can be used to drive both low- and high-power IGBTs, such as DC-DC, motor drives, and green energy power systems. It is also suitable for high-power IGBT converters and AC-AC switching applications. The device is designed to operate at a supply voltage of up to 600 V, output current up to 5 A, and a maximum transition frequency up to 400 kHz. Furthermore, IXDN609SITR has advanced protection features that enable it to withstand surges at the gate terminals, providing reliable operation over an extended temperature range.

The IXDN609SITR gate driver uses a half-bridge configuration to drive the IGBT. It is made up of two transistors, one n-channel power MOSFET and one p-channel power MOSFET, connected in series. These transistors are connected to the input voltage source and the gate drive is produced by controlling the gate signals of these transistors. The device is designed to operate with a minimum supply voltage of 6 V and a maximum of 600 V.

In addition to its supply voltage and current ratings, IXDN609SITR also offers a range of protection features. These include overcurrent protection, undervoltage lockout (UVLO), overvoltage protection (OVP), over-temperature protection (OTP), and auto-restart. It also features a PWM control mode, which allows the device to switch rapidly between the high and low states, helping to reduce switching losses. The device can be triggered using an external signal, making it easy to use in various applications.

IXDN609SITR is a versatile gate driver that offers a wide range of features and capabilities. Its high-voltage, high-current capabilities, along with its comprehensive protection features, make it well-suited to driving a variety of IGBTs in applications such as motor drives, DC-DC converters, and AC-AC switching. With its PWM control mode and external trigger capability, it is a reliable and efficient gate driver for many applications.

The specific data is subject to PDF, and the above content is for reference

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