Allicdata Part #: | IXFM15N60-ND |
Manufacturer Part#: |
IXFM15N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | N-Channel 600V 15A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFM15N60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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The IXFM15N60 is a chip field-effect transistor (FET), a type of solid state circuit element used to control and modulate electrical current. It is a member of the insulated gate FET (IGFET) family, also known as a MOSFET (metal-oxide semiconductor field-effect transistor). The IXFM15N60 is a single-gate FET designed to reduce losses through its channels and provide high switching speeds. As a result, it is ideal for power management applications that require low on-resistance and efficient power conversion.
The IXFM15N60 is a N-channel enhancement-mode FET device. This type of device features one gate which controls the current between the drain and source terminals. When the gate is positively charged, current flows; if the gate is unpowered, no current will flow. When integrated into a board or circuit, this FET behaves similarly to a switch; it can be used to turn components such as motors, lights and actuators on or off. The IXFM15N60 is well-suited to power switching circuits due to its low on-resistance.
The IXFM15N60 operates with a 60V drain source voltage, achieving a maximum current rating of 110A continuous and a maximum power dissipation of 229W. In addition, the IXFM15N60 has a very low threshold voltage of 3V, allowing it to be used in a wide range of low voltage applications. The IXFM15N60 can be used for DC-DC converters, switch mode power supplies and motor control applications, as well as lighting control, industrial automation and other applications of this type.
The working principle of the IXFM15N60 is relatively simple. First, an external drive (usually a pulse width modulation signal) is applied to the Gate terminal. When this voltage exceeds the threshold voltage of the FET, electrons in the oxide oxide layer will flow between the source and the drain, allowing current to pass through. This process is known as “pinchoff” and is the basis for efficient switching in FETs. As electrons and holes recombine in the source, the transistor is turned off.
The IXFM15N60 is a great example of the power smemilling efficiency of modern FET devices. Its low on-resitance and impressive power ratings allow it to be used in power-saving applications such as DC-DC converters and regulators, as well as in high-speed switching applications. The IXFM15N60 supports a wide range of operating voltages and is a reliable and cost-effective choice for many high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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