Allicdata Part #: | IXFM1766-ND |
Manufacturer Part#: |
IXFM1766 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | |
DataSheet: | IXFM1766 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
Description
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The IXFM1766 is a single N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is an ideal device for power management applications requiring low on-resistance, small footprint, and low gate charge. It is designed with a thick-oxide nitride layer and a planar design which makes the device tolerant to high voltage pulses. The IXFM1766 is a very robust in terms of switching and has excellent thermal characteristics due to its low on resistance.The IXFM1766 is designed for use in a variety of applications including power switching, audio amplifiers, power supply systems, and DC-DC converters. It is also suitable for high-frequency applications such as Programmable Logic Controllers (PLCs). The IXFM1766 has a low on-resistance of just 3.7Ω and a gate charge that is only 44nC. This makes it ideal for high-speed switching applications with minimal power loss.The IXFM1766 has three terminals: the gate, source, and drain. It is a depletion-mode device, meaning that it needs to be activated by applying a positive voltage (usually Vgs>5V) to the gate. The gate is then connected to the voltage source, which can be either AC or DC. When the gate voltage is applied, it creates an electric field across the depletion region of the MOSFET which drives the electrons from the source to the drain, creating a channel of conduction.The main advantage of the IXFM1766 is its low on-resistance and small footprint. This makes it ideal for power management applications and applications requiring minimal power loss. The IXFM1766 is also very reliable due to its thick-oxide nitride layer, which allows it to withstand high voltage spikes without damaging the device.The IXFM1766 is also highly efficient and reliable when used in DC-DC converters. It has a low gate charge, making it suitable for fast switching applications. Furthermore, the device is self-protected, meaning it has built-in protection features that protect it from short circuit and thermal overload conditions.Overall, the IXFM1766 is an ideal choice for power management applications. It has low on-resistance and is highly reliable due to its thick-oxide nitride layer. Its small, low-gate-charge footprint makes it ideal for high-switch applications, and its self-protecting features make it suitable for DC-DC converter designs.The specific data is subject to PDF, and the above content is for reference
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