Allicdata Part #: | IXFM67N10-ND |
Manufacturer Part#: |
IXFM67N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFM67N10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 33.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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The IXFM67N10 is a single N-channel MOSFET (metal oxide semiconductor field-effect transistor) designed for a wide range of building, instrumentation and automotive applications. This MOSFET is part of IXYS Corporation\'s family of low-voltage, high-current MOSFETs with monolithic fabrication process.
One of the important features of the IXFM67N10 is its low on-state resistance. It offers excellent switching performance and low gate-charge which translates into very low conduction losses and a very low thermal resistance. This MOSFET also offers very high speed turn-on, which helps in its use in a variety of applications, such as power regulation for solar panels, wave shaping and pulsed power supplies. It is also used in automotive, instrumentation, intelligent audio amplifier and MOSFET drive applications.
The IXFM67N10 has an operating temperature range of -55 to 125℃ and a breakdown voltage of 58V. It has a specified max Drain-Source On-Voltage of 0.21v and a max Gate-Drain Leakage Current of 0.1uA. It has an Input Capacitance of 740pF and an Output Capacitance of 585pF. The maximum Continuous Drain Current is 28A and the maximum Peak Drain Current is 57A.
The IXFM67N10 MOSFET consists of a single semiconductor channel region, between a drain and a source, which is controlled by a gate. In order to turn the transistor on, a certain threshold gate voltage must be applied, which then acts to pinch off the channel, controlling the device current flow. When the channel is open, the gate voltage must be increased to pinch it off again and turn off the device. The device is efficient because the gate can be operated at a very low voltage, allowing for efficient switching and power regulation.
The IXFM67N10 has a number of advantages, including excellent switching performance, low conduction losses, low thermal resistance, high speed turn-on, and low gate-charge. It also has a wide temperature range, which makes it well-suited for use in a variety of applications. Additionally, the IXFM67N10 is a low-cost and reliable solution for automotive, instrumentation, and audio amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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