IXFM35N30

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Power MOSFETs are used in increasingly demanding applications, such as high-power, high-frequency switching. IXFM35N30 is a special high-power MOSFET from IXYS Corporation. This device leverages the most advanced MOSFET fabrication technologies to provide superior performance in applications such as high-power, high-frequency switching.

An IXFM35N30 is a single N-channel, mild-speed, depletion-mode MOSFET with a low total Gate charge of 1.18 nC at high voltage. It features an RDS(on) of 35 mOhms and can handle a drain current rating of 60A. The data sheet spec states that the maximum rating of Vgs is -20V with a maximum Vds of 500V. The device is designed to be compliant with JESD22-A115, which is a stress testing standard used by the semiconductor industry.

The IXFM35N30 is used in applications such as AC/DC Converters, DC to DC converters, power system protection, and power supplies. It can be used to control the current or voltage in circuits where positional accuracy is critical. The device can be used to control power output, reduce electromagnetic interference (EMI), and provide a safe shutdown of a power supply. The IXFM35N30 is also suitable for high-frequency switching applications in consumer electronics and telecommunications.

The working principle of an IXFM35N30 is based on the physical design of a MOSFET. This device has three terminals—the gate, drain, and source. The gate terminal acts as a capacitor, allowing electric charge to be stored on it. When the gate terminal is connected to a positive voltage, the channel between the source and drain terminals become conductive, allowing current to flow. Conversely, when the gate voltage goes back low, the channel is no longer conductive, effectively cutting off current flow. This is what is known as the “on-off” behavior of a MOSFET.

The function of the IXFM35N30 is further enhanced by the temperature-dependent characteristics of the device. When ambient temperature rises, the out performance of the device increases, leading to higher power and voltage levels. On the other hand, the device output decreases when ambient temperatures drop. This enables the user to control the performance and power efficiency of the device.

In conclusion, the IXFM35N30 is a powerful MOSFET from IXYS Corporation that is used in a wide range of applications, from high-power AC/DC converters to high-frequency switching applications. It offers superior performance and excellent temperature-sensitive characteristics that make it a preferred choice for current and voltage control.

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