Allicdata Part #: | IXFM42N20-ND |
Manufacturer Part#: |
IXFM42N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | N-Channel 200V 42A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFM42N20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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transistors> FETs&MOSFETs > single
IXFM42N20 is an enhancement type power MOSFET with low on-resistance. It is suitable for pulse and continuous operation. Thanks to its low on-resistance, IXFM42N20 is suitable for a wide range of applications where fast switching and high efficiency are needed.
Application field
IXFM42N20 is suitable for applications such as DC/DC converters, motor controls, inverters, power supplies and uninterruptible power supplies (UPS). It is also suitable for buffering and energizing industrial inverters and converters. IXFM42N20 is rated at a current of up to 40A and a breakdown voltage of 40V.
Working principle
MOSFETs are capable of switching high currents quickly and with high efficiency. The IXFM42N20 power MOSFET is an enhancement type, which means the voltage applied to the gate is the same as the voltage dropped across the drain and source of the transistor. It has a relatively low on-resistance, making it suitable for high-power applications. Since it is an enhancement type MOSFET, it can be turned on by applying a voltage to the gate, and it will remain on until the voltage is removed.
Additionally, IXFM42N20 is an easy to control type since it does not require a negative gate voltage for operation. It also has a 100V drain-to-source breakdown voltage which allows it to switch higher voltages. The IXFM42N20 is also relatively easy to drive since it does not require a lot of gate current.
Conclusion
In conclusion, IXFM42N20 is an enhancement power MOSFET which has a low on-resistance, making it suitable for high-power applications such as motor controls and UPS. It can be turned on easily, and it can switch voltages up to 100V. Therefore, it is a suitable choice for applications which require high efficiency and fast switching.
The specific data is subject to PDF, and the above content is for reference
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