IXGX100N160A

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IGBT or Insulated Gate Bipolar Transistor is an advanced power and switching transistor that is used in a variety of applications. IXGX100N160A is one of the oldest, most reliable, and most popular IGBTs available. This article will discuss the application field and working principle of this device.

Applications

IXGX100N160A is mainly designed for use in DC-DC motor speed and load control, solar and wind power systems, AC-AC inverters, and Uninterruptable Power Supplies (UPS). It can also be used in other industrial and non-industrial applications where low power losses and reliable operation is required.

IXGX100N160A can be used as an alternative to conventional power MOSFETs and bipolar transistors as it offers superior switching performance and low on-state losses. It has a number of features that make it a perfect choice for many applications, including low gate-source capacitance, low crossover current and shortswitching times. In addition, IXGX100N160A has a broad range of gate drivers, allowing for easy parallel operation with improved current sharing and protection.

IXGX100N160A is a great choice for applications that require high frequency pulse width modulation (PWM) control, low losses and low EMI, such as HID lighting, medical devices, motor drives and power quality monitoring systems.

Working Principle

IGBTs function as switches. Like MOSFETs, IGBTs operate by creating a conducting channel between the gate and the source terminal. However, instead of a single resistor, the gate-source resistance is a combination of multiple resistors, giving the IGBT its unique characteristics.

IXGX100N160A is a short-circuit-tolerant, non-isolated CORE IGBT that has a positive temperature coefficient and can be used in circuits requiring low gate threshold voltage and high withstand voltage. This technology utilizes a single-sided power device architecture, which helps to reduce power losses and eliminates the need for a sinker or driver.

The main components of the IXGX100N160A are the base plate, the collector plate, and the two gate electrodes. The base plate and the collector plate form an intrinsic P-N junction that enables the device to conduct current when the gate voltage is above the threshold. This device also has a low-voltage level shifter, allowing for the integration of multiple power devices in a single package.

When the gate voltage is low, the IXGX100N160A turns off, blocking the flow of current. When the gate voltage is increased, the device turns on and allows a current to flow through. As the gate voltage is increased further, the current flow is increased. The IXGX100N160A can handle high currents and its switching performance is superior to that of conventional power MOSFETs.

Conclusion

IXGX100N160A is an advanced IGBT transistor that can be used in a wide range of applications. Its short-circuit-tolerant, non-isolated design allows it to be easily used in a variety of applications. In addition, its low-voltage level shifter and single-sided power device architecture make it a great choice for low-power, low-loss applications.

The IXGX100N160A is commonly used to control motor speed and load, drive solar and wind power systems, and power Uninterruptable Power Supplies. Its superior switching performance and low on-state losses make it perfect for applications requiring high frequency PWM control and low EMI.

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