IXGX50N60C2D1 Allicdata Electronics
Allicdata Part #:

IXGX50N60C2D1-ND

Manufacturer Part#:

IXGX50N60C2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 480W TO247
More Detail: IGBT PT 600V 75A 480W Through Hole PLUS247™-3
DataSheet: IXGX50N60C2D1 datasheetIXGX50N60C2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 380µJ (off)
Base Part Number: IXG*50N60
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 40A, 2 Ohm, 15V
Td (on/off) @ 25°C: 18ns/115ns
Gate Charge: 138nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction to IXGX50N60C2D1
IXGX50N60C2D1 is an Insulated Gate Bipolar Transistor (IGBT) designed to offer excellent switching performance and efficiency in power control applications. It is part of FZ58 package series, which has a high isolation voltage of up to 5kV. This device has been designed for use in power switching circuits, power supplies, motor control, solenoid control, and many other applications.

Application Field and Working Principle
IXGX50N60C2D1 is a collector-emitter voltage type IGBT, which has a maximum collector-emitter voltage of 600V. This transistor has a high current rating of up to 50A and is suitable for switching powers up to 22.44kW. The IGBT is mostly used as a power switch in applications where a fast switching time is preferred.

The basic operation of an IGBT is similar to that of a Bipolar Junction Transistor (BJT). When the voltage at the gate terminal is held at or below the gate threshold voltage, no conduction occurs between the collector and emitter terminals. When the gate voltage exceeds the gate-emitter threshold voltage, then a conduction channel is formed between the collector and emitter, and electrical current flows.

It should be noted that the IGBTs have a much faster switching time compared to the BJT transistors. This is because the input capacitance of an IGBT is much smaller compared to a BJT, because the gate electrode is isolated from the base region by a thin layer of silicon nitride. This thin isolated gate electrode creates a direct and low impedance path from the gate to the base region. Thus, the gate can be easily charged and discharged, resulting in a significantly faster switching time.

IXGX50N60C2D1 is also capable of carrying out pulse width modulation (PWM) control, which allows current to be regulated accurately without the need for additional circuitry. It also provides low disadvantages, low distortion and high frequency operation.

Conclusion
IXGX50N60C2D1 is a single IGBT transistor with a maximum collector-emitter voltage of 600V and current rating of up to 50A. This device is ideally suited for applications such as power switching circuits, power supplies, motor control, solenoid control, and many others. The IGBT offers excellent switching performance and efficiency in power control applications due to its fast switching time and ability to carry out pulse width modulation control.

The specific data is subject to PDF, and the above content is for reference

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