IXGX120N60B3 Allicdata Electronics
Allicdata Part #:

IXGX120N60B3-ND

Manufacturer Part#:

IXGX120N60B3

Price: $ 8.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 280A 780W PLUS247
More Detail: IGBT PT 600V 280A 780W Through Hole PLUS247™-3
DataSheet: IXGX120N60B3 datasheetIXGX120N60B3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 7.95459
Stock 1000Can Ship Immediately
$ 8.75
Specifications
Power - Max: 780W
Base Part Number: IXG*120N60
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 100A, 2 Ohm, 15V
Td (on/off) @ 25°C: 40ns/227ns
Gate Charge: 465nC
Input Type: Standard
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Current - Collector Pulsed (Icm): 600A
Current - Collector (Ic) (Max): 280A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGX120N60B3 is a single insulated gate bipolar transistor (IGBT). It is a power semiconductor device that is used as an electronic switch to switch currents and voltages between two points. The IXGX120N60B3 can be found both in discrete packages and in modules. Discrete packages are available with different ratings, such as current, voltage, and power dissipation.

Application Field

The IXGX120N60B3 is a suitable choice for high-current and high-efficiency power switch applications, such as: switching power supplies, motor drives, solenoid and relay drivers, UPS, industrial automation, lighting, and HVAC. It is also ideal for high-power, high-frequency switch-mode converter applications. The device can also be used in power switching and battery chargers applications.

Working Principle

The IXGX120N60B3 is a type of IGBT, which stands for insulated gate bipolar transistor. It has a unique construction that allows it to combine the low-loss protection of a bipolar transistor with the high-speed switching of a field-effect transistor (FET). It does this by using a special process which places an isolated gate between the collector and the base of the device. This gate controls the turn-on and turn-off times of the device, making it suitable for high-speed switching. With its low loss characteristics and high-speed switching, the IXGX120N60B3 is extremely efficient and reliable when it comes to power switching applications.

The IXGX120N60B3 is designed to operate in a wide range of frequencies, making it suitable for various power-switching applications. It is made with a thick-film isolation layer between the collector and emitter which helps protect it from external voltages. It features a low gate charge, which helps reduce switching losses and improve efficiency. The IXGX120N60B3 can also operate at much higher frequencies than typical power switches, which makes it ideal for applications requiring high-speed switching.

The IXGX120N60B3 provides several different protection features, such as over-current protection, inrush current control, and temperature protection. It also has both protective and diagnostic features for monitoring the operation of the IGBT. This device is extremely reliable, making it suitable for a wide range of power switch applications which require reliable operation.

The IXGX120N60B3 is a great choice for applications which require reliable, efficient, and high-speed power-switching operations. Its construction offers low-loss protection, while its high switching speed makes it an ideal choice for a variety of applications. Its multiple protection features make it reliable and safe, while its diagnostics allow for easy monitoring. The IXGX120N60B3 is suitable not only for powering complex equipment and machines, but also in various industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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