| Allicdata Part #: | IXGX120N60B-ND |
| Manufacturer Part#: |
IXGX120N60B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 600V 200A 660W TO247 |
| More Detail: | IGBT PT 600V 200A 660W Through Hole PLUS247™-3 |
| DataSheet: |  IXGX120N60B Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
Specifications
| Power - Max: | 660W |
| Base Part Number: | IXG*120N60 |
| Supplier Device Package: | PLUS247™-3 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 480V, 100A, 2.4 Ohm, 15V |
| Td (on/off) @ 25°C: | 60ns/200ns |
| Gate Charge: | 350nC |
| Input Type: | Standard |
| Switching Energy: | 2.4mJ (on), 5.5mJ (off) |
| Series: | HiPerFAST™ |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 120A |
| Current - Collector Pulsed (Icm): | 300A |
| Current - Collector (Ic) (Max): | 200A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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The IXGX120N60B is one of the most popular transistors in the IGBTs (Insulated Gate Bipolar Transistor) family. It is a single IGBT device, which means it has a single junction for switching current. It is mainly used for high power applications, such as motor control, power converters and industrial inverters. It offers a very good switching performance that makes it suitable for high frequency applications. Furthermore, its blocking voltage is very high, usually up to 800 volts.
Features
The IXGX120N60B is a low gate charge device, which means it requires low gate current to turn on. This makes it suitable for high speed applications. Furthermore, it has a low thermally enhanced figure of merit, which means that its on-state losses are very low. It also has a very low switching loss and its turn-off is very fast thanks to its snubber cells. The device has a very low on-state voltage drop, which can be beneficial for applications that require a high switching frequency.Applications
The IXGX120N60B is mainly used for power applications such as motor control, inverters and power converters. It is also suitable for high power applications where high switching speed and low on-state losses are desired. Its blocking voltage capability of up to 800 volts makes it suitable for a wide range of applications. Moreover, its low gate charge makes it ideal for high-speed applications such as DC-DC converters and AC inverters.Working Principle
The working principle of the IXGX120N60B is based on the IGBT principle. IGBTs are semiconductor devices that use a combination of bipolar transistor and insulated gate transistors to provide a controlled unidirectional current flow. It consists of two terminals, the collector and the gate. The collector is responsible for the current flow, while the gate controls it. When the gate receives a low voltage from the external timing circuit, it generates a high voltage moving across the junction, which reduces the voltage drop across the collector, allowing it to conduct large currents. On the other hand, when the gate receives a high voltage, the high voltage current decreases and the voltage drop across the collector decreases, making it impermeable to current.Conclusion
In conclusion, the IXGX120N60B is a robust and reliable IGBT device suitable for many power applications. It offers excellent switching performance, high blocking voltage, low gate charge and low on-state losses. These characteristics make it ideal for applications such as motor control, inverters and power converters. Furthermore, the working principle is based on the IGBT principle, with its gate controlling the current flow through the collector.The specific data is subject to PDF, and the above content is for reference
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