IXGX120N120A3 Allicdata Electronics
Allicdata Part #:

IXGX120N120A3-ND

Manufacturer Part#:

IXGX120N120A3

Price: $ 16.81
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 240A 830W PLUS247
More Detail: IGBT PT 1200V 240A 830W Through Hole PLUS247™-3
DataSheet: IXGX120N120A3 datasheetIXGX120N120A3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 15.28250
Stock 1000Can Ship Immediately
$ 16.81
Specifications
Power - Max: 830W
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 100A, 1 Ohm, 15V
Td (on/off) @ 25°C: 40ns/490ns
Gate Charge: 420nC
Input Type: Standard
Switching Energy: 10mJ (on), 33mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Current - Collector Pulsed (Icm): 600A
Current - Collector (Ic) (Max): 240A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Application Field and Working Principle of IXGX120N120A3

The IXGX120N120A3 is a single IGBT module designed for motor control applications. It is a high-power-density switching module that offers low on-state resistance, high current-handling capability, and fast switching speed. This makes it an ideal choice for applications such as motor inverters, electric vehicle inverters, and AC drive systems.

The IXGX120N120A3 includes an insulated gate-bipolar transistor (IGBT) chip with a resonant gate driver. This type of transistor allows for switching speeds up to 10kHz, making it suitable for the high speeds often required by modern motor control applications. It has a temperature operating range of -30°C to +150°C, making it suitable for use in both indoor and outdoor environments.

Working Principle

An IGBT is a type of transistor which functions as a switch. It has three terminals; the collector, the base, and the emitter. When a small current is passed through the base-collector junction, the transistor switches ON, allowing the current to flow from the collector to the emitter. When the current is stopped, the transistor switches OFF and the current is blocked.

The IXGX120N120A3 uses an insulated gate-bipolar transistor (IGBT) chip with a resonant gate driver. This type of transistor has an on-state resistance of only 0.1Ohm and is capable of switching speeds of up to 10kHz. It also features a diode reverse conducting capability (DRC) function which is used to protect the module when the voltage exceeds the rated value.

Conclusion

The IXGX120N120A3 is a single IGBT module designed specifically for motor control applications. It features low on-state resistance, high current-handling capability, and fast switching speed, making it an ideal choice for high speed applications such as motor inverters and electric vehicle inverters. It includes an insulated gate-bipolar transistor (IGBT) chip with a resonant gate driver, and also features a diode reverse conducting capability (DRC) function for additional protection.

The specific data is subject to PDF, and the above content is for reference

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