IXGX320N60A3 Allicdata Electronics
Allicdata Part #:

IXGX320N60A3-ND

Manufacturer Part#:

IXGX320N60A3

Price: $ 10.84
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 320A 1000W PLUS247
More Detail: IGBT PT 600V 320A 1000W Through Hole PLUS247™-3
DataSheet: IXGX320N60A3 datasheetIXGX320N60A3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 9.85131
Stock 1000Can Ship Immediately
$ 10.84
Specifications
Power - Max: 1000W
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 560nC
Input Type: Standard
Switching Energy: --
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Current - Collector Pulsed (Icm): 700A
Current - Collector (Ic) (Max): 320A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IXGX320N60A3 is a type of power transistor, specifically an Insulated Gate Bipolar Transistor (IGBT). IGBTs are composed of two semiconductor dies that are separated by an insulating layer. IGBTs are used in applications where high voltage and high current levels are needed. IXGX320N60A3 is used widely in industrial applications such as motor control, industrial heating equipment, uninterruptible power supplies, and heavy electric machinery.

Unlike other types of transistors, IGBTs use a gate-controlled bipolar junction transistor (BJT) configuration. This allows them to switch faster and with less power loss than traditional BJT transistors. The gate voltage acts as an insulated gate current to control the current flow through the device. This makes IGBTs an ideal choice for applications that require fast switching speeds and low power losses.

The IXGX320N60A3 has a maximum voltage rating of 600V with a maximum on-state current of 320A. The device can be used in either a half-bridge or full-bridge configuration. The device also features a low turn-on voltage of just 4V, making it one of the most power efficient IGBTs available. In addition, the device features a low gate charge of 8nC, making it the ideal choice for applications that require fast switching times.

When the IXGX320N60A3 is turned on, a positive current flows through the device. This current causes the N-type body of the transistor to turn on, allowing negative electrons to flow from the collector to the emitter . This creates a current path from the collector to the emitter, allowing the current to pass. As the gate voltage is increased, the electrons in the collector-emitter can flow more freely, increasing the current flow. When the gate voltage is reduced, the electrons become less active, reducing the current flow.

In addition to controlling current, the IXGX320N60A3 can also be used to regulate voltage. By utilizing PWM (pulse width modulation) techniques, the voltage across the device can be regulated. This is achieved by sending short pulses of high gate voltage to the device. This pulses the current through the device, allowing it to act as a voltage regulator. This makes the IXGX320N60A3 an ideal choice for applications that require precise voltage regulation.

The IXGX320N60A3 is a versatile and reliable power transistor, making it the ideal choice for a wide range of applications. Its fast switching speeds and low power losses make it ideal for applications needing high voltage and high current levels. In addition, its ability to regulate voltage makes it the perfect choice for applications that require precise voltage regulation. As a result, the IXGX320N60A3 is an ideal choice for a wide range of applications within industrial, automotive, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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