IXGX50N60AU1 Allicdata Electronics
Allicdata Part #:

IXGX50N60AU1-ND

Manufacturer Part#:

IXGX50N60AU1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO247
More Detail: IGBT 600V 75A 300W Through Hole TO-247AD
DataSheet: IXGX50N60AU1 datasheetIXGX50N60AU1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 4.8mJ (off)
Base Part Number: IXG*50N60
Supplier Device Package: TO-247AD
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 50ns
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Td (on/off) @ 25°C: 50ns/200ns
Gate Charge: 200nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGX50N60AU1 is a high performance IGBT module of the latest generation of Nexperia, with a maximum DC collector current of 50A and a total power dissipation of up to 1000W. It is packaged with IEC low profile package, making it suitable for a wide range of applications in the industrial, consumer, and automotive markets.

The IXGX50N60AU1 can be used for a number of different applications, including motor control and power supply solutions. With the fast switching speeds and the low on-state voltage drop, the IXGX50N60AU1 provides high efficiency when switching between the on and off states. This makes the module suitable for applications in the automotive industry, such as fuel injection, ABS, ESP and cruise control. It can also be used in home appliances such as air conditioners, washing machines and dishwashers, as well as industrial equipment.

The working principle of the IXGX50N60AU1 can be seen as the combination of a MOSFET and a bipolar junction transistor (BJT). The MOSFET is responsible for controlling the current flow, while the BJT turns the current on and off. When the gate of the MOSFET is brought above a certain threshold voltage, the MOSFET switches on, allowing current to flow from the collector to the emitter. At the same time, the BJT switches off, limiting the current flow and preventing the MOSFET from over-saturating. This combination of the MOSFET and BJT allows for fast switching speeds and low on-state voltage drops.

The IXGX50N60AU1 is a high voltage IGBT module that is capable of providing a high current with low power dissipation. It has an adjustable turn-off time, superior thermal performance, fast switching speeds and a low on-state voltage drop. These features make the IXGX50N60AU1 an ideal choice for a wide range of industrial, consumer and automotive applications.

The IXGX50N60AU1 can be used as a power switch or logic switching element in many different industries, including industrial, consumer and automotive. It is also suitable for applications requiring fast switching speeds and low on-state voltage drops. As a result, the IXGX50N60AU1 offers efficient power solutions for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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