
Allicdata Part #: | IXGX35N120BD1-ND |
Manufacturer Part#: |
IXGX35N120BD1 |
Price: | $ 10.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 70A 350W PLUS247 |
More Detail: | IGBT 1200V 70A 350W Through Hole PLUS247™-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 9.17826 |
Switching Energy: | 3.8mJ (off) |
Base Part Number: | IXG*35N120 |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 960V, 35A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 50ns/180ns |
Gate Charge: | 170nC |
Input Type: | Standard |
Series: | HiPerFAST™ |
Power - Max: | 350W |
Vce(on) (Max) @ Vge, Ic: | 3.3V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 140A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGX35N120BD1 is a single IGBT transistor with many applications and a broad range of compatible DC applications. It has a working voltage range from 0 to 1200V and a current rating of 35A at 25°C. The transistor has a maximum voltage drop of 1.4V at 35A and a rated power dissipation of 800W at Ta = 25°C.
Operation and Applications
This type of IGBT transistor operates in a simple on and off state, when the gate voltage is “on” the transistor turns “on” and conducts current, when the gate voltage is “off” the transistor stays off and no current flows. This basic functionality makes the IXGX35N120BD1 suitable for a range of different applications, including but not limited to; switching circuits, DC converters, H-bridge circuits, motor control, solar panel inverters, and in vehicles as part of the battery management systems.
Working Principle
The IXGX35N120BD1 uses the principle of insulated gate bipolar transistor (IGBT) to switch current between two different voltage levels. This type of transistor consists of two separate components; a P-type (or positive type) and an N-type (or negative type) of semiconductor material. When a positive voltage is applied to the P-type semiconductor, it will allow current to pass through to the N-type semiconductor. When the voltage is then reversed, the current flow is blocked. This simple on/off operation makes this type of transistor suitable for use in a range of different applications.
Safety Features
In addition to basic operation, the IXGX35N120BD1 also offers some safety features to help protect the user and the circuitry. This includes an integrated anti-parallel diode, which provides a path for the current to flow when the switch is in an off state. This prevents the semiconductor from becoming overly charged and experiencing damage due to overvoltage. In addition, the IXGX has temperature sensing capability and will automatically shut down if the temperature reaches a certain threshold.
Conclusion
The IXGX35N120BD1 is a single IGBT transistor with a wide range of applications. Due to its simple on and off nature, it is suitable for DC and switching circuits, motor control, solar panel inverters, and H-bridge circuits. In addition, it offers safety features such as temperature sensing and an integrated anti-parallel diode, helping to ensure the user and the circuitry stay safe during operation.
The specific data is subject to PDF, and the above content is for reference
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