Allicdata Part #: | IXGX40N120BD1-ND |
Manufacturer Part#: |
IXGX40N120BD1 |
Price: | $ 6.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V PLUS247 |
More Detail: | IGBT 1200V Through Hole ISOPLUS247™ |
DataSheet: | IXGX40N120BD1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 5.62779 |
Switching Energy: | -- |
Base Part Number: | IXG*40N120 |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Standard |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IXGX40N120BD1 is an Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. It is used for many applications, including motor control and power conversion. This device is designed to provide high speed switching and excellent thermal characteristics.
The IXGX40N120BD1 is a single IGBT module. It is designed to offer high current switching capability (with a maximum voltage of 1200V, collector current of 40A, and collector-emitter saturation voltage of 2.2V) and low on-state conduction losses (with an on-state resistance of 2.3mΩ at 25°C). It has an avalanche energy rating of up to 1kA, and a drain-source breakdown voltage of 1.2kV when the gate-emitter voltage is rated at 10V. Thisdevice makes use of an advanced field stop structure, resulting in reduced gate-drain capacitance and improved dv/dt capability.
The working principleof the IXGX40N120BD1 is based on controlling current through the voltage applied to its gate terminal. This is achieved by modulating its collector-emitter voltage when its input voltage is shifted. When the input voltage is low, the base–emitter junction is forward biased, and the collector-emitter voltage decreases. When the input voltage is increased, the base–emitter junction becomes reverse-biased, and the collector-emitter voltage increases.
The IXGX40N120BD1 is suitable for many applications, including motor drives and and lighting control systems,where regulated DC power supplies are used. It can also be used in AC/DC power conversion, DC/DC power conversion, solar powered systems, and other industrial applications.
The IXGX40N120BD1 is likely to be found in applications that require high speed switching and low conduction losses. It offers high efficiency and long life due to its robust construction and low power losses. Moreover, its quasilow input capacitance and halogen-free construction make it suitable for noise sensitive applications, such as those in medical and aerospace applications.
In summary, the IXGX40N120BD1 is a single IGBT module which offers highcurrent switching capability, low on-state conduction losses, and high durabilty. It is designed for use in motor control and power conversion applications, where high efficiency and long life are required. Its quasilow input capacitance and halogen-free construction make it suitable for a wide variety of applications, including those in medical and aerospace industries.
The specific data is subject to PDF, and the above content is for reference
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