IXGX60N60C2D1

Switching Energy:	400µJ (on), 480µJ (off)
Base Part Number:	IXG*60N60
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	35ns
Test Condition:	400V, 50A, 2 Ohm, 15V
Td (on/off) @ 25°C:	18ns/95ns
Gate Charge:	146nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	480W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 50A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Application Field and Working Principle of IXGX60N60C2D1

Introduction

The IXGX60N60C2D1 is a type of Insulated Gate Bipolar Transistor (IGBT) with a single chip module. It is part of the new generation of IGBT technologies developed by Infineon Technologies. The device is a super-junction IGBT on a 300mm single-chip module that offers enhanced performance, reducing device stress and protecting the system from damage in applications demanding high power density.

Application Field

The IXGX60N60C2D1 is designed for medium voltage applications such as motor drives, power converters, UPS and switch mode power supplies. It can be used in demanding motor control applications such as AC motor drives, DC motor drives, traction motor drives and refrigeration systems. The device is suitable for use in high power applications such as power converters, power supplies, and switch mode power supplies with high efficiency and low losses.This IGBT can also be used in renewable energy applications such as solar and wind power systems, and in industrial applications such as variable speed drives, load drives, UPS systems, welding machines and frequency converters.

Working Principle

The IXGX60N60C2D1 utilizes a super-junction structure to achieve a high voltage blocking capability. This structure is a combination of 2 vertical NPN and 2 vertical PNP transistors placed in a single chip. The NPN transistors are used as P-channel MOSFETs, while the PNP transistors are used as N-channel MOSFETs. The device operates at the intersection of two main operation modes: switching and voltage control (VCE(on)). When medium voltage is applied to the device, current flows through the device in on-state, and it is blocked off in off-state.The device also features a over-temperature protection (OTP) to protect the device from thermal overload and enhance its reliability. The OTP functions as a lockout switch which is activated when the chip exceeds a predetermined temperature threshold. This feature effectively prevents the device from over heating and damaging itself, thereby exstending the life of the device.

Conclusion

The IXGX60N60C2D1 is a type of Insulated Gate Bipolar Transistor (IGBT) with a single chip module. It is designed for use in medium voltage applications such as motor drives, power converters, UPS and switch mode power supplies. It utilizes a super-junction structure to achieve a high voltage blocking capability and features a over-temperature protection (OTP) to protect the device from thermal overload and enhance its reliability. This IGBT is suitable for use in demanding motor control applications as well as in renewable energy and industrial applications.

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