Allicdata Part #: | IXKC15N60C5-ND |
Manufacturer Part#: |
IXKC15N60C5 |
Price: | $ 3.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 15A ISOPLUS220 |
More Detail: | N-Channel 600V 15A (Tc) Through Hole ISOPLUS220™ |
DataSheet: | IXKC15N60C5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.47218 |
Vgs(th) (Max) @ Id: | 3.5V @ 900µA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXKC15N60C5 is a N-channel enhancement-mode power metal-oxide semiconductor field-effect transistor (MOSFET) specifically designed for high-frequency switching applications. It is manufactured using an advanced PowerTrench® process that combines the fast switching of an enhancement-mode MOSFET with low on-resistance as well as a reduced number of components. This makes the IXKC15N60C5 an ideal choice for high-frequency applications such as switching-mode power supplies, motor control, and power conversion systems.
The IXKC15N60C5 has a wide range of features which makes it suitable for a variety of applications. It has a drain current of 15A and a voltage rating of 600V, making it suitable for high current and voltage applications. It has a low output capacitance at high drain-source voltage which ensures fast switching and minimal switching losses. It also has a low gate charge, making it ideal for high frequency applications. It has a low on-resistance and a high maximum avalanche energy rating, so it can handle large current spikes without damage.
The IXKC15N60C5 is a MOSFET that operates based on the principle of an electric field created by a gate electrode between the source and drain. When a voltage is applied to the gate, the electric field creates aconductive channel between the source and drain, allowing current to flow. The gate voltage controls the amount of current allowed to flow through the MOSFET. These types of MOSFETs are known as enhancement-mode, because they do not conduct any current until a voltage is applied to the gate, whereby it “enhances” the conductive channel. This allows the IXKC15N60C5 to be used for very high switching frequency applications, such as motor control and power conversion.
The IXKC15N60C5 is most commonly used in high-frequency switching applications such as switching-mode power supplies (SMPS), dc-dc converters, motor control, and power conversion systems. It is also used in audio amplifiers, LED lighting, and sensors. Since it has a lower on-resistance than other MOSFETs, it is typically used to minimize power losses. In addition, its high maximum avalanche energy rating makes it ideal for high current applications such as motor control and power conversion.
In conclusion, the IXKC15N60C5 is an ideal power MOSFET for high-frequency applications such as switching-mode power supplies, motor control, and power conversion systems. It has a low output capacitance, low gate charge, low on-resistance and a high maximum avalanche energy rating, making it an ideal choice for high current and high frequency applications. It is also used in audio amplifiers, LED lighting, and sensors.
The specific data is subject to PDF, and the above content is for reference
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