IXKC19N60C5

Vgs(th) (Max) @ Id:	3.5V @ 1.1mA
Package / Case:	ISOPLUS220™
Supplier Device Package:	ISOPLUS220™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	2500pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	125 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXKC19N60C5 is a product from IXYS, a leading international manufacturer semiconductor and electronics components. The IXKC19N60C5 belongs to the product family of IXYS MOSFETs & Gen. Purpose Transistors and is a power MOSFET based on advanced planar stripe and DMOS technology. It is rated at 19 Amps and 600 Volts and is built especially for automotive applications.

IXKC19N60C5 Application Fields

The IXKC19N60C5 is suitable for a variety of applications, ranging from power distribution and motor control to lighting, DC-DC-switching converters and even automotive engine control systems.In automotive applications, the IXKC19N60C5 is ideal for use in cars, trucks, buses, and other vehicles. It is designed to handle a wide variety of tasks, such as controlling the fuel injectors, switching the electric power steering, driving the electronic throttle, providing power to high-side switches, and providing driving and regulation on the headlights.In industrial or commercial applications, the IXKC19N60C5 can be used for various power supply control and motor control tasks, such as controlling high and low-side switches, governing the motor speed and torque, driving ac and dc motors, providing high-side and low-side switching, and providing input and output of programmable logic controllers (PLCs).

IXKC19N60C5 Working Principle

The IXKC19N60C5 is built upon advanced planar stripe and DMOS technology and consists of an N-channel 170V Field-Effect-Transistor (FET) featuring low turn-on time, low on-resistance and dV/dt immunity.The device has two switching terminals, the gate and drain, plus two current-sensing terminals, the source and one of the current-sensing terminals. The power terminals the drain and source, are connected to the load, either directly or via a high-current power cable. The device can be activated by connecting the gate terminal to the positive power supply rail.The device is characterized by its low capacitance and high on-resistance, and is capable of operating at voltages of up to 600V and can provide up to 19A of load current. The MOSFET has excellent EMI filtering capabilities thanks to its very low input capacitance and high on-resistance.The IXKC19N60C5 is a robust and high-performance part suitable for a wide variety of tasks and applications. With its reliable and efficient performance, it perfect for use in applications that have stringent power requirements and higher power dissipation.

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