IXKC20N60C

The IXKC20N60C is a Silicon Junction Channel Field Effect Transistor (FET) which offers many unique characteristics and performance features. It is designed for use in various types of power switching and management applications. In this article, we will discuss the application field and working principle of the IXKC20N60C.

Application Field

The IXKC20N60C is a 600V, 19A, N-Channel, Junction Channel FET that is suitable for a variety of high-power switching applications. It is most suitable for applications where high power flow and low conduction losses are required. It is typically used in switching power supplies, DC-DC converters, motor control, high-frequency welding equipment, and various types of power switching and management systems.

Working Principle

The IXKC20N60C is a type of transistor that uses a metal-oxide semiconductor (MOS). It consists of three terminals: the gate, the source, and the drain. The gate terminal is the input of the transistor, and the source and drain are the outputs. When a voltage is applied to the gate terminal, it creates an electrical field that modulates conductivity between the source and the drain. The IXKC20N60C has an on-resistance of 11.2 mΩ and a maximum drain-source voltage of 600V.When the gate voltage is high (e.g. 12V), a channel forms between the source and the drain, allowing current to flow from the source to the drain. This is the on-state of the transistor. When the gate voltage is low (e.g. 0V), the channel shuts off, and no current can flow. This is the off-state.The IXKC20N60C also has several features that make it suitable for use in high-power switching applications. It has a maximum operating junction temperature of 150°C, and it is designed with a built-in thermal runaway protection circuit. This failsafe circuit will shut off the transistor if the junction temperature reaches a certain threshold.

Conclusion

The IXKC20N60C is a 600V, 19A, N-Channel, Junction Channel FET, designed for various high-power switching applications. It has an on-resistance of 11.2 mΩ, and a maximum operating junction temperature of 150°C. The transistor works by modulating conducting from a source to a drain through an electrical field applied to the gate terminal. The IXKC20N60C has a built-in thermal runaway protection circuit that shuts off the transistor if the junction temperature reaches a certain threshold.