IXKC23N60C5

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The IXKC23N60C5 is a silicon carbide MOSFET from IXYS Corporation. This device can be used for a variety of applications, such as in motor control and DC-DC converter control and provides a superior alternative to other MOSFETs thanks to its greatly enhanced efficiency, quick switching times and low loss characteristics. The IXYC23N60C5 has a maximum drain-source voltage rating of 1200V and a continuous drain current rating of 166A.

The device is a gate-commanded, vertical double-diffused MOSFET built on a 6.6mm, 1200V silicon carbide substrate. It features a burr-free gate oxide with epitaxial-lateral source-drain extensions and increased gate-to-source capacitance. The IXYC23N60C5 has a low Eon to reduce switching loss and a low dV/dt to improve performance.

At the heart of this device lies a process technology which enables fast switching and low on-resistance. The IXYC23N60C5 uses a six-layer gate-drain region and silicon carbide technology in order to minimize conduction and switching losses. The device also features a low gate-threshold voltage Vgs(th) for convenient switching and improved power conversion. The device is monitored by a temperature sensor that provides real-time temperature feedback.

The IXKC23N60C5 can be used in a variety of applications, such as in motor control, AC and DC-DC converter control, and inverter designs. The device provides superior control and high efficiency due to its low on-resistance. The device is suitable for high-current applications in electric vehicles, high-efficiency power supplies, and high gross power industrial motor control. Furthermore, its six-layer gate-drain region enables high current density and fast switching.

The IXYC23N60C5 employs a vertical double-diffused MOSFET design, where the gate is in direct contact with the drain and source. This configuration improves the channel conduction and switching performance and minimizes gate charge and switching loss compared with other MOSFET designs. On the other hand, due to it’s structure, the device’s RDS(on) value is lower than other single FETs of the same size.

The IXYC23N60C5 is a highly efficient semiconductor device, capable of switching currents with extremely little losses and swiftly. All this is achieved thanks to its special architecture, featuring a silicon carbide substrate, a low Eon, and a low dV/dt. Its features enable it to be used in a variety of applications such as motor control and inverter designs, providing superb efficiency and control. To sum up, the IXKC23N60C5 is a highly efficient MOSFET capable of providing superior control and power conversion in a variety of applications.

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