IXKC40N60C Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXKC40N60C is a high voltage, ultra-fast switching n-channel MOSFET that can be used in a wide range of applications, including telecommunication, audio, and power supplies. It has an operating drain current of 40A and an operating drain-source voltage of 600V. The IXKC40N60C was designed with low on-resistance and low gate resistance, making it an ideal choice for high speed switching, low-noise and high efficiency. Due to its high insulation, it can be used in a variety of switching applications at 600V and higher.

The IXKC40N60C is built on a silicon substrate, with the source and drain regions formed by a gate oxide layer. This oxide layer acts as an insulator between the source and gate, allowing for the source and gate to remain isolated from one another during operation. The IXKC40N60C also features a lateral power MOSFET structure, which consists of two lateral power MOSFETs in parallel, increasing the device\'s current capability while maintaining a high breakdown voltage.

The IXKC40N60C utilizes a p-channel MOSFET (2N7002A). It is typically used to control current flow in the power supply system, or to regulate forward or reverse bias in circuits. The p-channel MOSFET is controlled by the gate terminal, and its on-resistance is directly proportional to the amount of voltage applied to the gate terminal. The p-channel MOSFETs can be used for applications with an operating voltage range of 10V to 200V.

The IXKC40N60C has a high voltage, low-thermal resistance (RTH) N-channel MOSFET that facilitates fast switching with low switching losses. This device also features a junction temperature sensing circuit and a driving circuit to reduce switching losses. The IXKC40N60C is ideal for high frequency switching, allowing for a fast response time. This device is available in both the TO-220 and DPAK package.

The IXKC40N60C has a wide range of applications ranging from audio to power supplies and telecommunications. It is used in circuits where it is important to have a fast response time, low-noise operation, low losses, and high efficiency. It is also frequently used in applications requiring high isolation and high voltage, including rectifiers, converters, and voltage regulators. Additionally, this device can be used as an overvoltage protector, an inverter, and an overcurrent protector.

In conclusion, the IXKC40N60C is a high voltage, ultra-fast switching n-channel MOSFET. It has a wide range of applications and works in a wide range of voltages. It has low on-resistance, high breakdown voltage, and low gate resistance, making it an ideal choice for high speed switching applications. In addition, the IXKC40N60C features a Junction temperature sensing circuit and a driving circuit to reduce switching losses, making it an ideal choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference