| Allicdata Part #: | IXKH24N60C5-ND |
| Manufacturer Part#: |
IXKH24N60C5 |
| Price: | $ 4.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 24A TO247AD |
| More Detail: | N-Channel 600V 24A (Tc) Through Hole TO-247AD (IX... |
| DataSheet: |  IXKH24N60C5 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 3.63510 |
| Vgs(th) (Max) @ Id: | 3.5V @ 790µA |
| Package / Case: | TO-3P-3 Full Pack |
| Supplier Device Package: | TO-247AD (IXKH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 165 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXKH24N60C5 power transistor is an enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor) with a N-Channel. This MOSFET is particularly suited for applications involving hard switching, fast switching, and high current load conditions. It is designed for use in a wide temperature range from -55℃ up to +150℃.
Application Field
The IXKH24N60C5 is typically employed in high-current switched power applications. Examples of applications where this MOSFET is most suitable include power switching, high frequency switching, motor drives, solenoids, and flash circuits. This device is capable of high current density and is comparably priced to other power MOSFETs.
Working Principle
This MOSFET is a voltage-driven device, meaning that it is used to control the flow of current between two nodes with voltage, rather than with current. It does this by either partially or completely blocking the flow of current from one node to another. Due to its low resistance drain-source path, it is highly efficient in applications where efficiency is key such as in motor drives or power switching.
The IXKH24N60C5 power MOSFET has a VDSS of 24 volts and a drain-source of 0.0060 Ohms. This power MOSFET requires a gate voltage of at least 10 volts to turn it on, making it suitable for a wide range of applications. Additionally, it has a low gate charge of 7 nC, making it a compact and economical choice.
Finally, the IXKH24N60C5 has a low gate threshold voltage (Vth) of 2.5V, making it suitable for even the most demanding applications. It\'s maximum drain current of 23A, at 25℃, makes it perfect for reliable, high switching frequencies of up to 1MHz.
The specific data is subject to PDF, and the above content is for reference
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