IXKH70N60C5 Allicdata Electronics
Allicdata Part #:

IXKH70N60C5-ND

Manufacturer Part#:

IXKH70N60C5

Price: $ 15.66
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 70A TO247AD
More Detail: N-Channel 600V 70A (Tc) Through Hole TO-247AD (IX...
DataSheet: IXKH70N60C5 datasheetIXKH70N60C5 Datasheet/PDF
Quantity: 87
1 +: $ 14.23170
30 +: $ 11.96920
120 +: $ 10.99870
Stock 87Can Ship Immediately
$ 15.66
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXKH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXKH70N60C5 is a MOSFET (metal-oxide-semiconductor field-effect transistor) a type of transistor used in many electronic devices, from TVs and computers to medical equipment. It is a single-gate, junction field-effect transistor (JFET), which means that it covers the entire area or "active region" of the transistor, rather than using a metal gate. It is a voltage-controlled device, meaning that the current passing through it is determined by the voltage applied to its gate. The IXKH70N60C5 is suitable for a wide range of applications due to its high voltage handling capability (up to 600V), and high drain-source breakdown voltage, which allows it to handle higher current levels than some other types of transistors.

The IXKH70N60C5 is a P-channel enhancement-mode MOSFET, meaning that it is usually "off" or in the "cut-off" state and needs to have a positive voltage applied to its gate in order to act as a "switch" and turn on. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the N-type material in the active region, and forms a conductive channel between the source and drain. Once this channel is formed, current can flow freely from the source to the drain, allowing the MOSFET to act as a switch and allowing the amount of current that is flowing through it to be controlled by the voltage applied to the gate.

The IXKH70N60C5 is capable of handling high power levels, up to 85A continuous for applications such as synchronous rectification and dc/dc converters. It is also very useful in audio applications, in power amplifiers, where its low input capacitance and high power handling capability make it ideal for high-power audio amplifiers. It is also commonly used in motor control applications, such as in robots and other motor-driven systems.

The IXKH70N60C5 is used in applications where a high voltage and/or high power is required, as its high drain-source breakdown voltage and current-handling capability make it ideal for these types of applications. It is extremely popular in high-power audio applications, where its low capacitance makes it ideal for handling high power while maintaining a low signal-to-noise ratio. It is also used in motor control systems, where its voltage and current-handling capability make it ideal for controlling large motors.

In summary, the IXKH70N60C5 is a single-gate, junction field-effect transistor (JFET) suitable for a wide range of applications including high-power audio amplifiers, synchronous rectification and dc/dc converters, and motor control systems. It can handle up to 85A continuous and has a high drain-source breakdown voltage. Its low input capacitance also makes it ideal for high-power audio applications, as it can handle high power while maintaining a low signal-to-noise ratio.

The specific data is subject to PDF, and the above content is for reference

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