IXKH47N60C Allicdata Electronics
Allicdata Part #:

IXKH47N60C-ND

Manufacturer Part#:

IXKH47N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 47A TO-247
More Detail: N-Channel 600V 47A (Tc) Through Hole TO-247AD (IX...
DataSheet: IXKH47N60C datasheetIXKH47N60C Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 2mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXKH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: Super Junction
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXKH47N60C is an integrated Power MOSFET designed for operations in a wide range of switching applications in various levels of currents. It is a part of a large group of MOSFETs known as Insulated Gate Bipolar Transistor, or IGBTs. The IXKH47N60C is a N-channel, single MOSFET designed to provide high gain, low output noise, and low on-resistance. It is suitable for a wide range of switching applications, such as gate drive and other related low-voltage and low-current applications.

The IXKH47N60C is built using an innovative construction process using state-of-the-art advanced technologies. Its architecture is based on the advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) process, developed to ensure that the transistor’s performance characteristics exceed those of comparable devices. The device features full compatibility with most standard advanced hand soldering techniques and features a low electrode potential for maximum safety during soldering. Additionally, the IXKH47N60C also features a fully enhanced temperature-resistant cell structure.

The IXKH47N60C works in a very simple way. It uses MOSFETs to achieve a low input and output impedance, ensuring low on-resistance. In a single MOSFET configuration, the IXKH47N60C offers a high level of isolation between the input and output. This ensures faster switching, allowing for quick and accurate control of the current or voltage. Additionally, it also allows for higher levels of noise immunity, a reduction in power losses, and improved efficiency.

The IXKH47N60C has a wide range of applications, ranging from controlling large currents to providing the power needed to drive complex loads. It is commonly used in DC-DC converter management and other industrial automation applications, as well as low-voltage and low-current applications such as gate drivers and low-power applications. Additionally, the IXKH47N60C is also suitable for power applications in automotive and aerospace electronics.

The IXKH47N60C offers a robust solution for switching applications. Its low on-resistance, high gain, and low output noise ensure efficient performance, while its temperature-resistant cell structure ensures a long product life. Furthermore, its wide operating voltage range ensures that the IXKH47N60C can operate with various voltage levels, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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