Allicdata Part #: | IXKH30N60C5-ND |
Manufacturer Part#: |
IXKH30N60C5 |
Price: | $ 4.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 30A TO247AD |
More Detail: | N-Channel 600V 30A (Tc) Through Hole TO-247AD (IX... |
DataSheet: | IXKH30N60C5 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 4.41105 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.1mA |
Package / Case: | TO-3P-3 Full Pack |
Supplier Device Package: | TO-247AD (IXKH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXKH30N60C5 is a N-Channel MOSFET, designed in the latest Trench IGBT process. Its low on-resistance and fast switching times make it an ideal choice for use in switching and motor control applications. It is suitable for a wide variety of applications, from industrial motor controls and robotics to consumer electronics.
The IXKH30N60C5 is a high performance MOSFET which provides an optimal combination of power and efficiency. It features a standard TO-220AB package, with high performance bipolar transistor technology. It offers up to 30V drain-source voltage breakdown voltage, with a 600 V drain-source blocking voltage and a 2.5 A continuous drain current rating.
The IXKH30N60C5 is designed to be used in both low side and high side switch applications, and features a low on-state resistance and fast switching times. This makes it perfect for applications such as motor control, low-voltage switching and load switching. It also offers good EMI performance, with low power losses due to its advanced IGBT technologies.
The working principle of the IXKH30N60C5 is based on its ability to regulate the flow of current through the gate-source and drain-source voltages. When a voltage is applied to its gate, the voltage is regulated by the current flow through a channel created between the source and drain. This change in voltage across the source and drain allows a current to be passed or blocked depending on the applied voltage.
When the voltage at the gate of the IXKH30N60C5 is low, the MOSFET operates in the cutoff mode, and no current is allowed to flow through the channel. However, when the voltage is increased, the MOSFET enters the linear region, allowing current to flow through the device. In the linear region, the current flow is proportional to the voltage across the device.
In addition, the IXKH30N60C5 is able to control the current flow even when the voltage across the device is low. This is because the device has a low gate-source capacitance, which allows the current to be controlled and regulated. This feature is particularly beneficial for motor control applications, as it allows for precise control of the motor speed even at low voltages.
The IXKH30N60C5 is a versatile device, with many applications in different fields. It can be used for power switching, motor control, and other power conversion applications. It is also used in consumer electronics and robotics, as it provides efficient switching, low on-state resistance, and fast switching times.
Overall, the IXKH30N60C5 is a powerful MOSFET which is perfectly suited for a wide range of applications. Its low on-state resistance and fast switching times make it an ideal choice for a range of switching and motor control applications. Its wide range of operating voltages, high blocking voltage, and low gate-source capacitance make it an ideal choice for a range of power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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