IXKH35N60C5

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The IXKH35N60C5 is an N-channel enhancement mode field effect transistor. It is a high voltage, high speed, power MOSFET and is a member of the IXYS Cool MOS family. It has a relatively low gate charge and its low feedback capacitance provide best-in-class switching performance, making it suitable for a wide range of applications including power-management and power-switching. This type of transistor is designed for use in applications operating in high voltage and/or high temperature environments.

The IXKH35N60C5 is a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a type of transistor which uses metal-oxide (MOS) as a gate dielectric to control the flow of current between the source and drain. MOSFETs are considered to be the most common type of field effect transistor, as they are able to operate at a much smaller size than other types of transistors. Furthermore, they are cheaper to produce than bipolar transistors.

The IXKH35N60C5 is an N-channel MOSFET, meaning that it has an N-type source connected to the drain. The gate is the control element of the transistor, and its input controls the flow of electrons between the source and drain. The gate is insulated from the channel between source and drain by a thin layer of oxide material. When a positive voltage is applied to the gate, it attracts electrons away from the source and towards the drain, creating a conductive channel between the source and drain. Alternatively, when a negative voltage is applied to the gate, it repels electrons away from the drain, shutting off the flow of current and turning off the transistor.

In many cases, N-channel MOSFETs are more desirable than P-channel devices, due to their lower input capacitance, and their lower gate resistances. As a result, they are well-suited for use in high-frequency applications. Additionally, the IXKH35N60C5 has a relatively low gate charge of 8nC, making it suitable for power management and power switching applications. The low gate charge decreases the switching losses and therefore increases the device’s efficiency.

The IXKH35N60C5 is a robust device, with an operating junction temperature of up to 175°C, and a typical breakdown voltage of 600V. It can handle drain currents up to 35A and drain-source voltages up to 600V. It also features a wide range of features, including fast switching speed, low on-resistance, and a low threshold voltage. Due to these features, it is an ideal candidate for use in a variety of applications, such as DC-DC converters, motor drivers, and power converters.

The IXKH35N60C5 is an excellent choice for applications requiring high voltage, high speed, and power efficiency. Its combination of small size, low gate charge, and fast switching speed make it ideal for power-management, power-switching, and high-frequency applications. Its robust design and wide range of features also ensure it is capable of delivering reliable performance in harsh environments.

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