IXTF1N450

Vgs(th) (Max) @ Id:	6.5V @ 250µA
Package / Case:	i4-Pac™-5 (3 Leads)
Supplier Device Package:	ISOPLUS i4-PAC™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1730pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	85 Ohm @ 50mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	900mA (Tc)
Drain to Source Voltage (Vdss):	4500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTF1N450 is a N-Channel MOSFET power transistor, commonly used for a wide range of low voltage applications. It is a robust device that requires no additional gate control, and is widely popular as a switching power MOSFET due to its low on resistance levels.The IXTF1N450 is constructed with a single N-Channel MOSFET and is designed to be used in applications that require high speed, low voltage and low noise operations. It is built with an integral body diode and has a low gate-source leak current, making it suitable for applications where power dissipation must be kept to a minimum.Applications of the IXTF1N450 are varied and broad, as it can perform in a wide range of applications. Typical applications include small motor controls, DC/DC converters, power supply circuits and general power MOSFET switching. It is often used as a driver stage in inverters and small DC switch mode power supplies due to its low power consumption and low noise characteristics.The IXTF1N450 is a small package device, comprising of just two pins; the drain (D) and the source (S). Due to the single N-Channel construction, the IXTF1N450 requires no additional components such as resistors or capacitors to enable operation. To turn ON the IXTF1N450, a small voltage is applied to the gate-source junction, which causes the MOSFET to become conducting. The device will remain ON until the voltage is removed from the gate. This simple operation requires little effort, making the IXTF1N450 an ideal choice for low voltage switching applications.The IXTF1N450 is designed to operate with a maximum drain-source breakdown voltage of 60V, a maximum drain-source ON current of 4A and a maximum drain-source OFF current of 50mA. It is also designed to provide a maximum power dissipation of 6W and a drain-source ON resistance at gate voltage of Vgs=10V of just 0.29ohm.The low drain-source ON resistance and fast switching characteristics of the IXTF1N450 make it suitable for a wide range of switching applications. Its fast switching performance and low gate capacitance provide for efficient power transfer and low power dissipation. Furthermore, the IXTF1N450 has integrated overvoltage and overcurrent protection features, providing additional security for applications that are subject to voltage or current overloads.The IXTF1N450 is an incredibly versatile power transistor that has been designed to provide reliable and robust operation in a wide range of low voltage applications. Its fast switching time and low gate capacitance provide efficient power transfer and low power dissipation, while its integrated body diode, low gate-source leak current and integrated overvoltage & overcurrent protection provide added security for applications. Lastly, its small package size and simple operation allow for easy integration into any system with minimal effort, making it a popular choice for low voltage switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description