IXTF280N055T

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Ixtf280n055t (IXTF280N055T) is a single-channel enhancement mode MOSFET manufactured by the International Rectifier Corporation. It is part of the company\'s power management portfolio. The device is able to handle pulsed current and surge currents, which enables it to be used for applications such as motor control, voltage regulation and power conversion. This device is capable of many switching frequencies and has an operating range of -55°C to +150°C.

This MOSFET has an extremely low on-state resistance. The 470 mΩ RDS(ON) is suitable for very high current applications such as motor control and power conversion. As with all MOSFETs, the IXTF280N055T is designed to minimize dissipated power, while providing excellent switching performance. It is also designed to minimize on-state resistance, allowing it to reduce conduction losses significantly. This device has a maximum power dissipation of 1.5 W.

The IXTF280N055T device has medium-power switching capability and low on-state resistance, making it suitable for many applications, including power conversion, motor control, and voltage regulation. It is designed to operate with both AC and DC loads. The device is easy to install and requires no external components. It can also be used in high-performance control circuits and power amplifiers.

The IXTF280N055T device works on basic principles of field-effect transistors (FETs). When the Gate and Source terminals of the MOSFET are connected to ground and a positive voltage is applied, the current source flows into the drain. This creates a channel between the source and drain regions, which enlarges as the voltage across the gate-source is increased. The result is that the current from the drain to the source increases, making the device on. The size of the channel and the on-state resistance depend on the voltage applied.

The IXTF280N055T has a body diode, which allows current to flow in a forward direction. This enables the device to be used in applications that require a high input capacitance or fast switching. This device also features a separate diode, which enables faster switching and improved safety. The device is also designed to protect the circuit from high voltage spikes, making it suitable for many kinds of AC and DC applications.

Another important feature of the IXTF280N055T is its low gate-source resistance. This is key for obtaining fast switching speeds, as the gate must switch quickly to control the current flow. The low gate-source resistance also helps to minimize switching loss. The device is also designed to withstand high temperature and humidity levels.

In summary, the IXTF280N055T is a single-channel enhancement mode MOSFET from the International Rectifier Corporation. It is designed to handle pulsed and surge currents, and is suitable for many applications, including motor control, voltage regulation, and power conversion. Its low on-state resistance and fast switching enables it to reduce conduction losses and minimize dissipated power. The device also features a body diode, separate diode, and low gate-source resistance, allowing it to be used in many kinds of AC and DC applications.

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