IXTF2N300P3 Allicdata Electronics
Allicdata Part #:

IXTF2N300P3-ND

Manufacturer Part#:

IXTF2N300P3

Price: $ 31.50
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 3000V 1.6A (Tc) 160W (Tc) Through Hole I...
DataSheet: IXTF2N300P3 datasheetIXTF2N300P3 Datasheet/PDF
Quantity: 1000
25 +: $ 28.63220
Stock 1000Can Ship Immediately
$ 31.5
Specifications
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Package / Case: ISOPLUSi5-Pak™
Supplier Device Package: ISOPLUS i4-PAC™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
Vgs (Max): ±20V
Series: Polar™
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 3000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTF2N300P3 is an enhancement-type metal-oxide semiconductor field-effect transistor (MOSFET), which belongs to a family of single, power transistors features a high density cell design for extremely low on-resistance and fast switching performance. These MOSFETs also have good avalanche characteristics making them suitable for many applications like switching amplifiers, switch mode power supplies, DC-DC converters, and high frequency dc-dc converters. It has a maximum drain source voltage of 600V, a maximum gate to source voltage of ±20V, a continuous drain current of 11A and a peak current of 33A.

In most applications, the IXTF2N300P3 is used in voltages of up to 10V and currents of up to 12A. It is mainly used in the automotive sector as a switch in order to control the current internally or externally. It also finds applications in the industrial sector where it is used to control high power signals with high accuracy. In the aerospace sector, it is used as a high power switch to control the movement of motors, to control the power supply, or to act as a sensor for measuring the speed or temperature of the aircraft.

The working principle of the IXTF2N300P3 is based on the N-channel MOSFET principle. This type of transistor has a source, drain and gate, where the source and drain are two terminals for external connections and the gate is used to control the current. The current flow between the source and the drain is controlled by the voltage applied to the gate and is a function of the current flowing through the channel and the gate voltage. When a positive voltage is applied to the gate, the current flow increases, and when a negative voltage is applied, it reduces.

When the IXTF2N300P3 is used in switching applications, it is connected in a circuit such that the gate is held at a fixed voltage and the drain and source is connected to the external connection. When the voltage at the gate reaches the threshold voltage, the current flow between the source and drain is switched on or off. This can be used to control the current flow or to switch a high power signal with high accuracy.

The IXTF2N300P3 is also used in linear applications such as amplifiers, power supplies and linear regulators, where the maximum current through the MOSFET can be controlled by a voltage applied to the gate. In these applications, the voltage is set such that the current through the MOSFET is a linear function of the voltage applied to the gate.

The IXTF2N300P3 is a versatile MOSFET which has a wide range of applications in many industries, ranging from automotive to aerospace. It is highly reliable with low switching losses and good availability of high current ratings and low gate voltages. It is also suitable for high frequency applications and has good voltage feedback characteristics making it suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IXTF" Included word is 11
Part Number Manufacturer Price Quantity Description
IXTF03N400 IXYS 0.0 $ 1000 MOSFET N-CH 4000V 300MA I...
IXTF6N200P3 IXYS 17.21 $ 1000 MOSFET N-CHN-Channel 2000...
IXTF2N300P3 IXYS 31.5 $ 1000 MOSFET N-CHN-Channel 3000...
IXTF1N400 IXYS 0.0 $ 1000 MOSFET N-CH 4000V 1A ISOP...
IXTF230N085T IXYS 0.0 $ 1000 MOSFET N-CH 85V 130A ISOP...
IXTF250N075T IXYS 0.0 $ 1000 MOSFET N-CH 75V 140A ISOP...
IXTF280N055T IXYS 0.0 $ 1000 MOSFET N-CH 55V 160A ISOP...
IXTF1R4N450 IXYS 47.55 $ 28 2500V TO 4500V VERY HI VO...
IXTF02N450 IXYS 25.82 $ 144 MOSFET N-CH 4500V 0.2A I4...
IXTF1N450 IXYS 35.08 $ 193 MOSFET N-CH 4500V 0.9A I4...
IXTF200N10T IXYS 5.58 $ 1000 MOSFET N-CH 100V 90A I4-P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics