Allicdata Part #: | IXTF250N075T-ND |
Manufacturer Part#: |
IXTF250N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 140A ISOPLUS I4 |
More Detail: | N-Channel 75V 140A (Tc) 200W (Tc) Through Hole ISO... |
DataSheet: | IXTF250N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | i4-Pac™-5 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTF250N075T is a high-voltage, low-on-resistance, dual N-Channel MOSFET. It is designed for use with modern switched mode power supplies, in particular those designs where both primary and secondary power switches are integrated into a single device. This device offers very low on-resistance, fast switching performance, and excellent noise immunity. In addition, it features a proven surface mount package that is designed to improve reliability and reduce costs.
IXTF250N075T is an ideal choice for power management applications such as motor control, converters, inverters, and other switch-mode power supply related applications. It is suitable for applications where high switching performance and efficiency is needed, such as the control of solenoids and motors. The device is also suitable for applications where high voltage and long life operation is required, such as in automotive and industrial products.
The IXTF250N075T is a Single N-Channel MOSFET (Metal–oxide–semiconductor field-effect transistor). It consists of a semiconductor material with two terminals, the source, and the drain. An electric field is created between two terminals, and a voltage applied to the gate terminal modulates the conductivity of the field effect region between the source and the drain, allowing current to flow through the MOSFET. This current flow can be controlled by the gate voltage, allowing the device to serve as a switch.
The IXTF250N075T offers excellent switching performance and low on-resistance. This makes it an excellent choice for use in power management applications where both high efficiency and power delivery are needed. In addition, this device is designed for use in applications where a high level of reliability is necessary, such as automotive and industrial products. The device features a proven surface mount package which is designed to reduce costs and improve reliability and electrical performance.
The IXTF250N075T is an ideal choice for a wide range of applications, including power management, motor control, converters, and other switch-mode power supply related applications. In addition, the device offers excellent noise immunity and fast switching performance, making it suitable for efficient and reliable power delivery in any application. Its high voltage and long life operation make it a great choice for automotive and industrial products.
The specific data is subject to PDF, and the above content is for reference
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