IXTF6N200P3

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The IXTF6N200P3 is a high performance power field-effect transistor (FET) manufactured by IXYS Corporation. This versatile FET is capable of amplifying or switching signals across a wide range of voltages and frequencies. It is ideal for use in high performance and high power applications including power management, motor control, and power conversion.

The IXTF6N200P3 is a single N-channel enhancement-mode FET. It has an on-resistance rating of 200 mΩ max. at a 2.5A source current. The FET can provide high current gains over a wide range of voltage and frequency, making it well-suited to a variety of applications. Additionally, the IXTF6N200P3 has a low input capacitance and a low gate-source capacitance which allows for quick and efficient operation.

The IXTF6N200P3\'s working principle is based on the same principles as other FETs. It is a three terminal device with a gate, drain, and source terminal. Voltage applied to the gate terminal causes a current to flow between the source and drain terminals, allowing the FET to amplify or switch signals between the two nodes. The IXTF6N200P3 is optimized for high voltage and high frequency operation, making it well-suited for power management, motor control, and other power conversion applications.

The IXTF6N200P3\'s wide range of capabilities makes it an ideal choice for many power applications. The FET can provide high current gains over a wide range of input voltages and frequencies, making it ideal for high power applications such as power management, motor control, and other power conversion applications. Additionally, the FET\'s low input and gate-source capacitance make it well-suited for fast switching operations.

In summary, the IXTF6N200P3 is a high performance power field-effect transistor manufactured by IXYS Corporation. It is a single N-channel enhancement-mode FET that has an on-resistance rating of 200 mΩ max. at a 2.5A source current. The FET is optimized for high voltage and high frequency operation, making it well-suited for power management, motor control, and other power conversion applications. It is also characterized by a low input and gate-source capacitance, making it well-suited for high speed switching operations.

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