Allicdata Part #: | JANTX2N6762-ND |
Manufacturer Part#: |
JANTX2N6762 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AA TO-3 |
More Detail: | N-Channel 500V 4.5A (Tc) 4W (Ta), 75W (Tc) Through... |
DataSheet: | JANTX2N6762 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA (TO-3) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | Military, MIL-PRF-19500/542 |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6762 is a single, N-channel MOSFET that is used in a wide range of applications. The device is manufactured by Toshiba, and it is part of the JANTX MOSFET family.
The JANTX2N6762 is a robust device on account of being constructed from a silicon epitaxial planar for the drain, source, and gate connections. The P-channel region is insulated from the N-channel to form a unified structure.
The device comes in a dual TO-3P package, and its maximum voltage ratings are 30 V drain-source or drain-gate and ± 20 V gate-source. Its maximum drain current is 25 A, with a pinch-off voltage of -2.0 or -2.2 V, depending on the drain current. The device combines low gate-source capacitance with a low gate charge and high switching performance.
In terms of its applications, the JANTX2N6762 is used for high voltage switching in DC, low frequency AC and medium frequency PWM applications. Its typical applications include DC motor speed control, battery isolation and switching, power switching, and DC/AC inverters.
The JANTX2N6762 also has a wide range of working principle. With MOSFETs, one of the main working principles is voltage control of drain current. This means that the voltage on the gate of the device can be controlled in order to control the size of the drain current. This is done by the gate voltage controlling the number of "holes" in the drain-source channel, which in turn affects the size of the drain current.
In order to properly control the gate voltage, a gate-source resistor is used to limit the current flowing into the gate. When the voltage on the gate is high, more current is allowed to flow, resulting in an increase in the drain current. Similarly, when the gate voltage is low, the current flow is restricted, resulting in a decrease in the drain current.
The JANTX2N6762 is also designed to handle temperatures up to 175°C, making it suitable for high temperature applications. In addition, the device\'s low gate charge makes it suitable for use in high frequency switching applications.
The JANTX2N6762 is a versatile MOSFET with a wide range of applications and a high switching performance. Its low gate charge, high voltage ratings, and high temperature handling capabilities make it perfect for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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