JANTX2N6764T1

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The JANTX2N6764T1 is a single N-Channel Enhancement-mode Field Effect Transistor (FET). It is designed for medium voltage, high speed switches or linear application purposes and operates with very low on-state resistance. This high quality FET is designed to be rugged and able to withstand transient electrical shocks.

The JANTX2N6764T1 is manufactured using a dielectric isolation process using silicon on insulator (SOI) technology. This ensures the FET has a low off-state leakage current and high on-state current over a wide temperature range. The FET also has very low input and output capacitance values which make it ideal for applications that require high switching speeds or low gate drive power.

The drain to source resistance of the JANTX2N6764T1 is very low and this allows the FET to be used as a switch or a signal amplifier. The gate to source capacitance is also low which reduces its switching time. The FET can be used in low voltage DC circuits, high voltage AC circuits and pulse circuits.

The working principle of a field effect transistor is based on the fact that when a voltage is applied to the gate, a current will flow between the drain and the source. This current is proportional to the voltage applied to the gate. This current is controlled by the thickness of a very thin layer of a semiconductor material (called a "source") that lies between the gate and the drain.

The JANTX2N6764T1 is a field effect transistor designed for applications such as pulse circuits, high voltage AC switching, analog signal amplification, and low voltage DC switching. It has an extremely low off-state leakage current, low on-state saturation voltage, and low on-state resistance. This makes it an ideal choice for power supply design, power amplifiers, and switching applications.

The JANTX2N6764T1 is ideal for applications that require high switching speeds or low gate drive power. It offers low input and output capacitance values which also make it suitable for use in pulse circuits. Its temperature range is rated for -55°C to 175°C, making it a good choice for an extended operating temperature range.

In conclusion, the JANTX2N6764T1 is a single N-Channel Enhancement-mode Field Effect Transistor (FET) ideal for a variety of applications. It is manufactured using a dielectric isolation process using silicon on insulator (SOI) technology to ensure low off-state leakage current, high on-state current, low input and output capacitance values, as well as a low drain to source resistance. It is best suited for power supply design, power amplifiers, and switching applications.

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