JANTX2N6766

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The JANTX2N6766 are N-Channel enhancement-mode insulated-gate Field Effect Transistors (FETs) specifically intended for digital and analog small-signal switching and amplification applications. Suitable for high input impedance applications such as sample and hold circuits, analog switching and level conversion of signal levels from low (TTL) to high levels (+15V).

The JANTX2N6766 consists of an AlGaAs HEMT (High Electron Mobility Transistor) on a standard ceramic package with exposed thermal pad. The device features both an external gate terminal and an isolated internal N-channel. Low gate charge means these transistors allow faster switching times, while low on-state resistance ensures minimum power dissipation as well as higher efficiency. The JANTX2N6766 are optimized for Vgs down to -15V and operate from -55°C to +175°C.

Working Principle

An insulated-gate FET (IGFETs) are a type of FET in which the gate is insulated from the channel by a layer of metal oxide. This isolates the gate from the channel, allowing it to effectively operate as an insulator. Unlike BJT (bipolar junction transistors), the insulated-gate FET relies on field-effect control of the current through the channel. When a voltage is applied between the gate and the source, an electric field is created which alters the conductivity of the channel and allows current to flow. It is this ability to control the channel current that makes the insulated-gate FET an essential device in many electronic circuits.

The JANTX2N6766 FETs feature excellent high-frequency performance and a low gate-to-drain capacitance for improved switching speed. This low capacitance results in a high power deposition capability and faster response times. In addition, the JANTX2N6766 FETs utilize a low impedance source to allow low-current operations.

Applications

The JANTX2N6766 are well suited for numerous applications which require precision, speed and high current capabilities. These transistors are most commonly used in analog switching circuits and level conversion of signal levels from low (TTL) to high levels (+15V). In addition, they are used in high voltage switching circuits, power switching and control circuits, industrial temperature sensing and control, display driver, and driver logic circuits.

The JANTX2N6766 can also be used as power amplifiers in high frequency applications and as audio amplifiers in both professional and consumer applications. Their low gate-to-drain capacitance results in improved audio quality in amplifier applications. Furthermore, they are used in medical and military applications, such as fusion or actuation of valves, optical sensors, and environmental monitoring.

The JANTX2N6766 FETs are ideal for medium-power, high-frequency applications where low-noise performance and fast switching times are required. Their high input impedance allows for excellent accuracy in voltage measurements, making them well suited for sample and hold circuits. They can also be used in power sources, amplifiers and other RF components used in various communication systems.

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