Allicdata Part #: | JANTX2N6768-ND |
Manufacturer Part#: |
JANTX2N6768 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AE TO-3 |
More Detail: | N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | JANTX2N6768 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | Military, MIL-PRF-19500/543 |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6768 is a high-performance silicon n-channel Junction Field-Effect Transistor (JFET), manufactured using the planar epitaxial junction process and designed for use in the applications of analog switching and RF amplifier. It features a high gain due to its integrated gate-to-source protection diodes, an optimized gate oxide design, and excellent thermal stability.
The JANTX2N6768 is also exceptionally stable, since its gate leakage current is quite low at less than 0.003 μA under a temperature of -65°C to 125°C. Moreover, the reverse breakdown voltage of this transistor is rated at 40V, which makes it suitable for applications that require high voltage switching.
JANTX2N6768\'s working principle is rooted in the behavior of metal–oxide–semiconductor (MOS) and junction field-effect transistors (JFET). It has three terminals: the source terminal, the drain terminal and the gate terminal. In the MOSFET operation, when the gate voltage is applied, the channel forms a channel between the source and the drain and current passes through the channel.
In order to create the channel, holes, or electrons, are drawn towards the gate and the depletion region, which is the region where the holes and electrons are depleted, is formed. This region confines the current to the channel, thereby allowing current to flow. In the JFET operation, when the gate voltage is applied, the electrons move away from the gate to the drain terminal, thus allowing current to pass.
The JANTX2N6768 has a wide range of applications, from precision control and switching applications to RF amplifiers and other power supply circuits. In addition, it can also be used as a voltage regulator, for high and low impedance audio amplifiers, for analog switching and as a high frequency amplifier.
It has a wide range of uses and its high current-handling capacity, high gain and stability make it one of the most sought-after transistors in the market. Due to its ability to handle a wide range of voltages, it is preferred for analog and RF applications, such as audio and video amplifiers, receivers, and wireless transceivers.
The JANTX2N6768 is an ideal device for applications where precision, high gain and low power consumption are important, as well as in applications that require a high switching speed. It is also suitable for high and low impedance audio amplifiers, in analog switching, in high frequency amplifiers, and in power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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