Allicdata Part #: | JANTX2N6768T1-ND |
Manufacturer Part#: |
JANTX2N6768T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-254AA |
More Detail: | N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | JANTX2N6768T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package: | TO-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | Military, MIL-PRF-19500/543 |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6768T1 is a field-effect transistor (FET) often used in high-speed switching applications. It is categorized as a single-channel JFET – a type of FET that is capable of controlling large amounts of current, while providing more linear operation than other transistor types. The JFET is constructed using insulated gate structures and the main advantage of using this type of transistor is the control of low-level signals while maintaining high output voltage.
The JANTX2N6768T1 is a dual-gate (DG) device specifically designed to operate in high-frequency switching applications. This device is temperature stable and reliable, making it an ideal choice for applications frequently interrupted or reversed. Common applications for the JANTX2N6768T1 include switching circuits, converters, generators, oscillators and amplifier circuits.
This device has several characteristics that make it incredibly useful for switching applications. Firstly, the JANTX2N6768T1 has a low reverse bias current, meaning it will return to its stable state even after it has been overdriven. It also has a low-threshold voltage, enabling high-efficiency operation with minimal power consumption. It is also designed to operate at very low supply voltage levels, making it an ideal choice for low power applications.
The JANTX2N6768T1 works through a simple yet effective principle. A gate voltage is supplied to the device, which causes an inversion of current between the source and drain terminals. This creates a depletion region between these terminals where current can no longer flow. This region acts as an insulation layer that allows the device to control the flow of current through a circuit. The device can be switched on and off depending on the gate voltage applied. When a low gate voltage is applied, current will flow from the source to the drain; whereas at higher gate voltages, current will remain blocked.
The JANTX2N6768T1 is a reliable and temperature-stable device that can be used for many high frequency switching applications. It is also a cost-effective solution and is relatively easy to use. With its low power consumption, low reverse biasing current and low threshold voltage, the JANTX2N6768T1 is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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