Allicdata Part #: | JANTX2N6784U-ND |
Manufacturer Part#: |
JANTX2N6784U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 200V 2.25A (Tc) 800mW (Ta), 15W (Tc) Sur... |
DataSheet: | JANTX2N6784U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 18-CLCC |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 15W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
Series: | Military, MIL-PRF-19500/556 |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.25A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6784U is a single N-channel enhancement mode field effect transistors (FETs) for low power input stages. It is pin compatible with industry standard part number 2N6784. This is best suitable for applications where low power input stage is required. Many general-purpose analog circuits such as audio amplifiers, video amplifiers and switch circuits require an N-channel enhancement mode FET. The main advantage of using an enhancement mode FET is that it requires very small amount of gate current to be fully activated. The drain and source voltage rating of this device is -45V and 40V respectively. The device has a maximum drain-source current rating of 2.0A and gate source voltage rating of -2V to +8V. It has a gate source capacitance of 3.2pF and drain-source capacitance of 7.2pF.
The working principle of JANTX2N6784U is based on enhancement mode FETs. These devices use a non-conductive gate to control the flow of electrons between the source and drain terminals. When the gate is provided with a positive voltage, the electric field between the gate and substrate creates an inversion layer in the substrate. This inversion layer acts as a channel between source and drain, allowing electrons to flow between them. This mode is called as the “enhancement mode”. This device has a low drain-source on-resistance rating of 0.07ohm for a gate voltage of -4V. This makes it suitable for low power input stages.
JANTX2N6784U is mainly used in low noise audio amplifiers, video amplifiers and switch circuits. It is also used in high speed analogue switch circuits. Because of its low on-resistance, it is also used in power MOSFETs for high power switch applications. It can also be used in voltage regulators for providing low drop-out voltage regulation. With its wide range of applications, JANTX2N6784U is an ideal single N-channel enhancement mode FET for various consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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