JANTX2N6788

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-205AF Metal Can
Supplier Device Package:	TO-39
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	800mW (Tc)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	Military, MIL-PRF-19500/555
Rds On (Max) @ Id, Vgs:	350 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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JANTX2N6788 (hereinafter referred to as “JANTX2N6788”) is a multiple Layer Field Effect Transistor (FET) with a single-gate construction manufactured by the Motorola Corporation. JANTX2N6788 possesses a very high level of reliability, consistency and repeatability for the majority of applications.JANTX2N6788 is typically used in low-noise amplifier, low-noise pre-amplifier, high-current switch and high-power amplifier applications. It is also used in audio amplifiers, tone control circuits, and in driving systems that require a low-distortion amplifier with a wide range of frequency response.JANTX2N6788 is manufactured using the latest advanced technologies and can provide excellent performance in high frequency, linear and low noise designs. It has a low forward gate leakage current, high efficiency, and high speed switching characteristics. The JANTX2N6788 is designed to operate over a wide voltage range and temperature range and has static protection diodes and an ESD protection level of 1000V RMS.JANTX2N6788 working principle is mainly based on the switching effect of a field effect transistor (FET). FETs, also known as unipolar transistors, are three-terminal devices, with two Gate terminals and one Drain terminal. The two Gate terminals allow for the direct current (DC) between them, whereas the Drain terminal is the output of the FET. The Gate terminals are capacitively coupled to the Drain terminal. This means that when a voltage is applied to the Gate terminals, an electric field is established between them, thus allowing a current to flow between the Gate terminals and the Drain terminal.The major difference between JANTX2N6788 and other types of FET transistors is that it has multiple layers. This allows for a higher switching speed, as multiple layers can produce a stronger field effect and thus a higher output current. Besides a larger switching speed, the multiple layers also allow for a larger drain current capability, which translates to higher output power.The basic idea behind JANTX2N6788 working principle is that the voltage applied to the Gate terminals controls the electrical field between them, and thus the potential current flow between the Gates and Drain terminals. When the Gate voltage is low, the electric field is weak and current flow is low. On the other hand, when the Gate voltage is high, the electric field is stronger and the current flow is higher, thus allowing for high output power.Overall, JANTX2N6788 is a highly reliable and cost-effective single-gate FET that is widely used in a variety of applications including low-noise amplifiers, low-noise pre-amplifiers, high-current switches, high-power amplifiers, audio amplifiers and tone control circuits. Its high level of reliability, efficiency, speed, and static protection diodes make it an excellent choice for a variety of applications.

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