JANTX2N6790

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The JANTX2N6790 is a type of MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor), a type of transistor with three terminals that is used for a range of applications that require high insulation. This device is specifically designed to have a wide drain-source voltage range and high output current capability. It is fabricated using a double-polysilicon manufacturing process and other applied technologies.

Application Field

The JANTX2N6790 is commonly used in a wide range of applications where voltage isolation and power switching are needed, such as flyback and step-down power supplies and gate drivers. Additionally, it can be used for battery-powered devices and is suitable for high-voltage isolation applications. The transistor is also employed in high-current pulse-width-modulation circuits that may require short turn-off times.

Working Principle

The JANTX2N6790 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor), which comprises three terminals, namely a gate, a source, and a drain. The channel of a MOSFET is created by applying a voltage V to the gate. When V is applied, the channel is populated with charge carriers, which allows current to flow between the source and the drain. The higher the gate voltage, the more current that is allowed to flow though the source and the drain terminals. When V is removed, the MOSFET turns off, stopping current conduction and preventing forward current.

The JANTX2N6790 also has a wide drain-source voltage range. This allows it to be used in a variety of applications, such as gate drivers, flyback and step-down power supplies, high-current pulse-width-modulation circuits, and high-voltage isolation. In addition, this MOSFET is also relatively insensitive to electrostatic discharge and is therefore more reliable.

Conclusion

The Jantx2N6790 is a type of MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) with a wide drain-source voltage range and high output current capability. This makes it suitable for a range of applications such as gate drivers, flyback and step-down power supplies, high-current pulse-width-modulation circuits, and high-voltage isolation. The MOSFET is also relatively insensitive to electrostatic discharges, making it a more reliable device.

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