Allicdata Part #: | JANTX2N6802U-ND |
Manufacturer Part#: |
JANTX2N6802U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 500V 2.5A (Tc) 800mW (Ta), 25W (Tc) Surf... |
DataSheet: | JANTX2N6802U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 18-CLCC |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | Military, MIL-PRF-19500/557 |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6802U is a type of advanced FET (Field Effect Transistor) device used in low-power applications. It is well-suited for use in power management circuits and is used as a switch or an amplifier in many types of electronic equipment. The JANTX2N6802U was designed to be highly efficient, reliable and cost-effective. In this article, we will discuss the application field and working principle of this device.
Application Field
JANTX2N6802U can be found in many different types of electronic systems ranging from consumer electronic equipment to military hardware. It is typically used in a variety of power management applications such as low noise motor control, voltage regulators, and battery discharge circuits. It is also commonly used as a switch in relays, solenoids, and lamp control systems. Additionally, it can be used as an amplifier in audio systems and RF communication applications.
Working Principle of FETs
The JANTX2N6802U is a Field Effect Transistor (FET) device. A FET is a type of transistor device that operates by utilizing the electric field to control its current flow. A FET consists of three terminals: the source (S), the gate (G) and the drain (D). It operates according to the principle that the voltage applied between the gate and the source can control the current that flows between the drain and the source. Yet, the current flow is determined by the resistance between the source and the drain, not the voltage of the gate.
The current flow through an FET is determined by a phenomenon called channel conductivity modulation. Under normal operation, when the voltage applied between the gate and the source is more positive than the threshold voltage of the device, the channel of the FET is “open”, allowing current to flow between the drain and the source. If the voltage applied between the gate and the source is slightly less than the threshold voltage, the channel of the FET is “closed”, blocking any current flow.
In addition, the current flow also depends on the transconductance factor (gm) of the particular FET device being used. The gm of a FET is the ratio of the output current over the input voltage, meaning that higher gm devices are capable of driving more current that lower gm devices. Therefore, the JANTX2N6802U was designed to be highly efficient and reliable due to its high gm rating.
Conclusion
The JANTX2N6802U is a powerful, cost-effective FET device that can be used in a variety of applications. It is well-suited for low-power applications due to its high current driving capability and efficiency. Additionally, its small size, low power consumption and high reliability make it a great choice for power management circuits and other electronic projects that require precise and accurate control of current flow.
The specific data is subject to PDF, and the above content is for reference
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