Allicdata Part #: | JANTX2N7227U-ND |
Manufacturer Part#: |
JANTX2N7227U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Surface... |
DataSheet: | JANTX2N7227U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-267AB |
Supplier Device Package: | TO-267AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | Military, MIL-PRF-19500/592 |
Rds On (Max) @ Id, Vgs: | 415 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N7227U is an N-channel, single-gate Field Effect Transistor (FET) designed for use in circuits requiring higher input impedance than a typical junction transistor. It has a rated threshold voltage of −18V and a drain current of up to 1A continuous. JANTX2N7227U is commonly used in battery management, DC motor speed control applications, and linear amplifier circuits.
A FET is a type of transistor composed of two semiconductor layers, known as the source and drain, separated by an ultra-thin gate. By applying a voltage to the gate, a voltage and current waveform can be created at the drain. Compared with BJT (Bipolar Junction Transistor) which uses two currents to create a waveform, FET require only one current and therefore have a much higher input impedance.
In terms of JANTX2N7227U\'s working principle, this transistor is composed of two ultra-thin layers of semiconductor material, called the drain and source regions. These regions are separated by a thin gate oxide layer, which acts as an insulator to prevent the flow of electrons between the two regions. When a voltage is applied to the gate, a depletion region is created in the gate oxide layer and this allows the reverse flow of electrons, which is referred to as channel formation. As a result, a gate voltage is required to enable current flow through the transistor.
JANTX2N7227U is widely used in various applications including DC motor speed control, linear amplifier circuits, and battery management systems. In battery management systems, it is used to provide overcharge and over-discharge protection. In DC motor speed control applications, JANTX2N7227U is used to provide precise speed control as it can produce an accurate linear current for the motor. It is also used in linear amplifier circuits as it provides high input impedance.
In conclusion, JANTX2N7227U is an N-channel, single-gate FET with a threshold voltage of −18V and a rated drain current of up to 1A continuous. It is commonly used in DC motor speed control, linear amplifiers and battery management systems as it is able to provide high input impedance and linear current when a voltage is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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