JANTX2N7228U Allicdata Electronics
Allicdata Part #:

JANTX2N7228U-ND

Manufacturer Part#:

JANTX2N7228U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH
More Detail: N-Channel 500V 12A (Tc) 4W (Ta), 150W (Tc) Surface...
DataSheet: JANTX2N7228U datasheetJANTX2N7228U Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-267AB
Supplier Device Package: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: Military, MIL-PRF-19500/592
Rds On (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The JANTX2N7228U is a popular field effect transistor (FET) designed specifically for use in power-related applications that require very high current operation. It is a single-gate device, meaning it has only one gate and one source terminal. JANTX2N7228U is designed with a very low on-state resistance and a maximum operating temperature of 175°C. This makes it suitable for applications that require extreme levels of heat dissipation.

The JANTX2N7228U has a variety of applications such as power amplifiers, power switches, DC-DC converters and rectifiers, as well as motor control circuits. It is also used in power MOSFETs, signal FETs, and for applications requiring rugged and reliable components. The device is available in a variety of packages including SOIC, DIP, and through-hole, making it easy to integrate into any system.

The working principle of the JANTX2N7228U is similar to that of a MOSFET. When the gate voltage is applied to the device, it will create an inversion layer in the semiconductor material. This inversion layer created by the gate has a negative charge which will attract the positive charge carriers (electrons) in the semiconductor. When these positive charge carriers move towards the gate, it creates a flow of current and this current is what powers the device.

When no gate voltage is applied to the device, the device is in the off state and no current will flow. In the on state, the device will be able to handle higher levels of current. The performance of the device is based on the device architecture and how it handles voltage and current. The JANTX2N7228U device is designed for superior performance in high current applications.

The JANTX2N7228U is a versatile component with a wide range of applications in power electronics and can be used for many different applications. It is an ideal choice for applications that require high current operation and excellent heat dissipation. This device is reliable and rugged and can provide superior performance for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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