JANTXV2N6756

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JANTXV2N6756 is a single N-channel enhancement-mode power MOSFET device. This device is typically used in power supply and motor control applications. It has a very low on-state resistance and low gate-source threshold voltage. JANTXV2N6756 is also suitable for use in high frequency switching applications and high noise immunity applications.

The JANTXV2N6756 is a four-terminal device. It contains a source, gate, drain and body. The source and body terminal form the input of the device. The gate terminal is the control electrode and the drain terminal is the output of the device. There is an insulated gate between the gate and the source. The gate is held at ground potential and driven by a control signal. When the gate is driven, the field between it and the source will increase the resistance between the channel and the source. This will reduce the current flow from the source to the drain.

The working of JANTXV2N6756 can be divided into four regions -cutoff region, triode region, saturation region and linear region. In the cutoff region, no current flows between the source and drain. This is attained when the gate-source voltage is below the flat-band voltage. The triode region is the region in which moderate current flows between the source and the drain. This is attained when the gate-source voltage is slightly higher than the flat-band voltage. In the saturation region, high current flows between the source and the drain. This is attained when the gate-source voltage is much higher than the flat-band voltage. In the linear region, there is an increase in the current flow between the source and the drain. This is attained when the drain-to-source voltage is increased in small increments.

The JANTXV2N6756 can be used in power supply and motor control applications. Also, it has low on-state resistance and low gate-source threshold voltage. That is why it is suitable for use in high frequency switching applications and high noise immunity applications. It is used for switching the high power AC signals in inverters, and for controlling the speed of motors. This device can also be used for high voltage switching in motor control applications, such as contactors. Additionally, it can be used for electronic ballast applications, such as driving fluorescent lamps.

To summarize, the JANTXV2N6756 is a single N-channel enhancement-mode power MOSFET device that is usually used in power supply and motor control applications. It contains a source, gate, drain and body terminals and can be divided into four regions - cutoff region, triode region, saturation region and linear region. It has very low on-state resistance and low gate-source threshold voltage, making it suitable for high frequency switching and high noise immunity applications. The JANTXV2N6756 can be used in power supply and motor control applications, inverters, contactors, electronic ballast applications and for driving fluorescent lamps.

The specific data is subject to PDF, and the above content is for reference