JANTXV2N6758

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JANTXV2N6758 is a high-frequency Field Effect Transistor (FET) used in a variety of applications. The transistor belongs to the family of MOSFETs, which are single-gate FETs with a semiconductor substrate containing no channels. It is manufactured using a 5-micron process and is encapsulated in a hermetically sealed metal container. JANTXV2N6758 can be used in a variety of radio frequency applications, such as RF amplifiers, mixers, and oscillators.

The operating principle of JANTXV2N6758 is based on the effect of an electric field on the conductivity of a semiconductor. It works on the principle of a voltage controlled variable resistor, where the gate voltage is used to control the resistance between the source and drain. The gate voltage applied to the FET can either increase or decrease the electrons\' resistance, allowing current to either flow or not flow, respectively. This transistor model also includes a built-in diode for ESD protection.

The typical operating parameters for JANTXV2N6758 FETs include a drain-to-source breakdown voltage of 40 V, a drain-source current of 25 mA and a drain-source capacitance of 39 picofarads. This FET has a frequency range of 30 MHz to 200 MHz, though this may vary depending on the operating conditions. The noise figure of this FET is typically between 9 and 10 dB and the transconductance is 70 mS.

JANTXV2N6758 can be used in a variety of radio frequency applications. It is used in linear and switching amplifiers, up-converters, and oscillators. It is also used in microwave systems for broadband applications and high-frequency switching circuits. This FET can also be used in oscillators and mixers for signal generation and signal mixing. In addition, it can be used as an RF switch in RFID, cellular and WLAN systems.

JANTXV2N6758 is a reliable, high-performance FET that is used in a variety of radio frequency applications. The semiconductor substrate of this FET eliminates the need for a channel, making it ideal for applications requiring high-frequency operation and low power consumption. Thanks to its built-in diode for ESD protection and its wide frequency range, this FET is well-suited for use in RF systems.

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