Allicdata Part #: | JANTXV2N6898-ND |
Manufacturer Part#: |
JANTXV2N6898 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET P-CHANNEL 100V 25A TO3 |
More Detail: | P-Channel 100V 25A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | JANTXV2N6898 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 15.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTXV2N6898 is a single type field effect transistor (FET), specifically a N-Channel Enhancement Mode Vertical DMOS FET. FETs are transistors used to control current flow in electronic circuits. Compared to typical bipolar junction transistors, FETs have high input resistance and low output resistance, which are useful for amplifying voltage and switching applications.
The construction of the JANTXV2N6898 is based on a vertical planar diffusion structure that can be optimized for high speed switching. The device operates utilizing a vertical N-Channel enhancement mode FET design by implementing a DMOS process. The N-Channel extends from the source to drain, through a lightly doped region and a heavily doped region. This separates the source and drain from the substrate outside of the junction and creates low parasitic capacitance.
The JANTXV2N6898 can be applied in a wide range of industrial applications such as motor control and power management, automotive and aerospace, telecom and IT systems, power supplies, automation, and test and measure. It is also used in analog circuits to implement voltage regulation and signal processing functions. Moreover, these devices are also found in digital processors, logic components and communications networks.
The JANTXV2N6898 device has three terminals: gate, source, and drain. The device acts like an electrically activated valve, controlling current flow between source and drain. When a voltage is applied to the gate, it creates a strong electric field and draws electrons from the source to the drain. This creates an n-channel between source and drain, and amplifies voltage, allowing the current to flow.
The JANTXV2N6898 operates at high levels of efficiency and can handle high-power switching applications. It has a drain-source on-current (IDSS) between 100mA and 500mA, an off-state drain-source breakdown voltage (BVDSS) between 25V and 60V, and an I/O capacitance of 1.9pF-7.8pF. It has high quality packaging options in order to increase its utilization and to ensure reliable operation. It also has thermal considerations including a junction-to-air thermal resistance of 65.C/W.
In summary, the JANTXV2N6898 is a single type field effect transistor (FET) used as an electrically activated valve to control current flow between source and drain. It has a drain-source on-current (IDSS) between 100mA and 500mA, an off-state drain-source breakdown voltage (BVDSS) between 25V and 60V, and an I/O capacitance of 1.9pF-7.8pF. It can be found in a wide range of applications such as motor control and power management, automotive and aerospace, telecom and IT systems, power supplies, automation, and test and measure. The device is efficient and can handle high-power switching applications, making it a reliable solution for controlling current flow.
The specific data is subject to PDF, and the above content is for reference
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