Allicdata Part #: | JANTXV2N6901-ND |
Manufacturer Part#: |
JANTXV2N6901 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V 1.69A |
More Detail: | N-Channel 100V 1.69A (Tc) 8.33W (Tc) Through Hole ... |
DataSheet: | JANTXV2N6901 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-205AF Metal Can |
Supplier Device Package: | TO-205AF (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 8.33W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 5V |
Series: | Military, MIL-PRF-19500/570 |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.07A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 1.69A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The JANTXV2N6901 is a depletion type Partially Diffused MOSFET, with a higher breakdown voltage value than the industry standard. It is suitable for applications in telecommunications, networking, and military and aerospace applications where circuit stability, high gain, and high levels of EMI/RFI immunity are important factors. Its main feature is that it operates in a much wider temperature range compared to other transistors.
The JANTXV2N6901 has a number of advantages that make it a popular choice for a wide variety of applications. The most important of these advantages is its simplified construction, which consists of a semiconductor material with a low gap region (silicon or germanium) that is sandwiched between two metal-oxide-semiconductor layers. Because of this simple construction, the JANTXV2N6901 requires less power than other transistors, meaning that it can be used for applications with limited power consumption. It also has excellent thermal characteristics and is highly efficient in comparison to bipolar transistors.
The working principle of the JANTXV2N6901 is relatively simple. It has two gates, an internal and an external one, which are connected to a metal oxide semiconductor material with a low gap region. When a voltage is applied to the gates, it creates an electric field around the metal oxide, which causes a change in the current flow between the two gates. This change in current flow is proportional to the applied voltage and is used to regulate the output current of the circuit. The draining voltage is controlled by the internal gate, while the gate voltage is controlled by the external gate. The switching speed of the JANTXV2N6901 is also very fast, making it suitable for high-speed applications.
The JANTXV2N6901 can be used in a wide range of applications. It can be used for power amplifiers, low noise amplifiers, frequency converters, oscillators and for switching circuits, such as motor control, relay control and light dimming applications. It can also be used in switching applications where fast switching speeds are essential. The JANTXV2N6901 is particularly well-suited to applications that are subject to extreme environments, including elevated temperatures or exposure to high voltage.
In conclusion, the JANTXV2N6901 is an extremely versatile transistor, with a wide range of applications. Its simplified construction, efficient design, and high-performance make it a popular choice for high-end and extreme environment applications. It has a low switching speed and is highly reliable, making it a great choice for applications that require reliable switching performance. In addition, its working principle is relatively simple and it requires less power than other transistors, making it an ideal choice for limited power applications. Thus, the JANTXV2N6901 is an ideal choice for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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