KSA708YBU Allicdata Electronics
Allicdata Part #:

KSA708YBU-ND

Manufacturer Part#:

KSA708YBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor PNP 60V 700mA 50MHz 800mW...
DataSheet: KSA708YBU datasheetKSA708YBU Datasheet/PDF
Quantity: 17558
Stock 17558Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSA708
Description

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The KSA708YBU is a bipolar junction transistor (BJT) and part of a single transistor family. This family of transistors boasts a high power level as well as excellent high-frequency characteristics. It is one of the most common and widely used transistors in commercial and industrial applications.

The KSA708YBU is primarily designed to operate in switching and interface applications. It is ideal for use in general switching circuits, redundant circuits, timing circuits, signal amplification, pulse generation, high-frequency switching circuits, engine control, and other applications. This power transistor is also employed for a variety of other purposes, including radio frequency (RF) amplification, pulse generation and switching, and tunable analog functions.

The KSA708YBU is typically equipped with a NPN structure. It has three terminals, often referred to as the emitter, base and collector. The emitter is used as the input terminal and the collector as the output terminal, while the base is used to control the transistor\'s base current. When current flows through the emitter and is received through the base of the NPN transistor, a proportionate current is also supplied to the collector.

The KSA708YBU has a beta of 200, which is its gain at Collector-Emitter. This gain enables the transistor to perform better over a wide range of frequencies compared to a basic silicon transistor. Additionally, the device covers a wide range of frequencies, from several kHz to several Ghz. All this makes the KSA708YBU one of the most versatile BJTs available.

The KSA708YBU also has other important features, such as a low turn-on voltage and low gate-capacitance. These characteristics make it a good choice for power switching. This device can be used in a wide range of switching circuits, from simple on/off switches to complex analog circuits. The low turn-on voltage means that the transistor can be turned on at low voltages, which is important in some applications.

This transistor also features a low collector-emitter saturation voltage, which reduces the amount of power it consumes when in operation. This allows the KSA708YBU to be used in many power management applications. This device can also handle large currents, up to 50A, making it suitable for use in high-power switching and amplifier circuits.

In summary, the KSA708YBU is a versatile, high-performance transistor with a range of features that make it suitable for a wide variety of applications. It has a high current capacity and a high gain, as well as low turn-on voltage, low collector-emitter saturation voltage, and low gate-capacitance. All of these features make the device an excellent choice for many power management, switching, and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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