KSA733CYTA Allicdata Electronics

KSA733CYTA Discrete Semiconductor Products

Allicdata Part #:

KSA733CYTATB-ND

Manufacturer Part#:

KSA733CYTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.15A TO-92
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 250m...
DataSheet: KSA733CYTA datasheetKSA733CYTA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSA733
Description

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KSA733CYTA transistors are a type of single bipolar junction transistor (BJT). These specialized transistors can be used in a variety of different applications. Before using these transistors, it is important to understand their working principles and the applications they are best suited for.

A BJT is basically a three-layer semiconductor device. Essentially, it is a type of current-controlled field-effect transistor that is composed of two P-N junctions with different types of semiconductor material between them. A single BJT has three terminals — the base, the emitter and the collector — with the collector and the base forming the middle layer between the emitter and the collector. The current flowing through the base-collector junction is proportional to the voltage applied to the base terminal.

The KSA733CYTA transistors are specifically designed to work with both high voltage and low voltage. They are designed to allow high-current flow between its collector and emitter while providing a low input impedance. These transistors are also designed to have low on-adjustment times, which means that they will be able to handle high frequency power signals better than other types of transistors. This makes them ideal for use in power amplifiers, motor control systems and inverters.

These transistors are also designed to work well in RF applications. They offer a high breakdown voltage, low saturation voltage and excellent resistive-capacitive (RC) performance. This makes them perfect for use in radio receivers and transmitters. The transistors also have an excellent power dissipation rate, which makes them suitable for use in high power systems.

In addition to the above applications, KSA733CYTA transistors can also be used for digital logic circuits and signal conditioning in things like signal processing, machine control and computer systems. Their low transition time and low signal distortion makes them ideal for digital logic applications.

The working principle of these transistors is based on the basic principle of transistor construction. The current flowing through a BJT is controlled by the voltage applied to its base. The current flowing through the collector-emitter junction is proportional to the voltage applied to the base. The base-collector reverse bias also controls the current flowing through the emitter-collector junction. The transistors can be made to operate in both the forward and reverse polarities.

KSA733CYTA transistors are useful for a wide range of applications. They are designed to provide a low input impedance, low on-adjustment times and excellent resistive-capacitive performance. They are also designed to work well with both high voltage and low voltage and are ideal for use in high power systems. Their low transition time and excellent power dissipation rate make them perfect for use in digital logic circuit, RF applications and signal conditioning.

The specific data is subject to PDF, and the above content is for reference

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