KSA733CLBU

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KSA733CLBU is a type of single bipolar transistor (BJT). It is designed to be used in high temperature industrial, commercial, and military applications where stability and reliability is of the utmost importance.

The KSA733CLBU is a medium power npn transistor, which means that it has an n-type (emitter) and a p-type (collector) region of the PN junction between its three terminals, the emitter, base and collector. Its collector-base breakdown voltage is 100V and collector-emitter voltage is of 70V. Its maximum DC collector current of 800mA and total power dissipation is 500mW.

The construction of the KSA733CLBU is based on the modern epitaxial mesa technology and includes an integrated collector-emitter region surrounded by an injection zone of a polycrystalline base material, the ability to withstand high junction temperatures, an optimized guard ring structure, an integrated inter-electrode capacitances and a high-temperature bismalemide planar passivation with gold metallization. Regarding its characterization, the collector is highly doped to reduce its base width resistance, the base is formed of polycrystalline material and the device structure is designed for lower inter-electrode capacitances.

When considering the KSA733CLBU’s applications, it can be used for medium power applications, particularly in switching and amplifier circuits running under high temperature and where the reliability and stability of the device is of paramount importance. It is also suitable for audio and linear amplifiers, due to its high voltage and current gain.

Regarding its working principle, current flows within the KSA733CLBU transistor through the emitter and base junction. The emitter-base junction works like a diode and only allows current to flow in one direction. This current is then amplified by the collector and passed on out of the device. The amount of current amplification and the switching speed of the transistor can be controlled by its base current, giving designers more flexibility when configuring their circuits.

In conclusion, the KSA733CLBU transistor is a high temperature single bipolar transistor that can be used in medium power applications, particularly in switching and amplifier circuits, due to its high voltage and current gain and its ability to withstand high temperature junctions. The flow of current through the device is controlled by its base current, giving designers the ability to better configure their circuits for optimum performance.

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