KSA733GTA Allicdata Electronics

KSA733GTA Discrete Semiconductor Products

Allicdata Part #:

KSA733GTAFSTB-ND

Manufacturer Part#:

KSA733GTA

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.15A TO-92
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 250m...
DataSheet: KSA733GTA datasheetKSA733GTA Datasheet/PDF
Quantity: 1000
2000 +: $ 0.02556
6000 +: $ 0.02223
10000 +: $ 0.01889
50000 +: $ 0.01667
100000 +: $ 0.01482
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSA733
Description

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The KSA733GTA is a single-bipolar transistor (BJT) device. It is a high-power transistor that is designed to be used in a wide range of different applications. The main features of the device include a high current gain (the hFE range is from 800 to 1250), low power dissipation, and a wide voltage range (the Vce range is from 85V to 150V).

The KSA733GTA is commonly used in high-power audio and power switching applications, such as motor control and power stages. It is also commonly used in RF applications such as cellular base stations, broadcast and telecom amplifiers, portable radios and other wireless communication systems.

The working principle of the KSA733GTA is based on the transfer of electrical charge from the base to the collector as the current flows from the emitter to the collector. The base current is controlled by the base-emitter voltage (Vbe). As the base current increases, so does the collector current and hence the output power. The voltage between the collector and emitter (Vce) is the output voltage and is determined by the current gain (hFE) of the device.

The KSA733GTA is a popular device because of its high power handling ability and wide bandwidth. It is capable of providing large continuous output power while achieving high efficiency, low distortion, and low noise. It is also highly reliable and capable of operating at high frequencies. The device is also capable of operating in harsh environments, such as high temperature locations.

In addition to its use in audio and power switching applications, the KSA733GTA can also be used in RF applications. Its high voltage range makes it suitable for high-power RF amplifiers and its extremely fast switching times make it well-suited for modulation applications. The device is also tolerant to ESD, making it an attractive choice for applications in the electronics industry.

Overall, the KSA733GTA is a powerful yet reliable transistor that is suitable for a range of different applications. It is a robust device that is capable of withstanding harsh environments and providing high-performance solutions in audio and power switching as well as in RF applications.

The specific data is subject to PDF, and the above content is for reference

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